Non-selective copper film growth on Kapton (polyimide) by MOCVD

Marzouk, H. A.; Kim, J.Y.; Kim, J.S.; Reucroft, P. J.; Jacob, Robert J. K.; Robertson, J. D.; Eloi, Corinne C.

doi:10.1016/0040-6090(94)90080-9

Cited by 9 publications

(8 citation statements)

References 12 publications

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“…The small deviation from the bulk value might be attributed to grain boundaries or to adsorbed contaminants and humidity from the ambient atmosphere when exposed after the deposition. [31] Using the same precursor in the presence of hydrogen by conventional CVD, [37] and nebulized spray pyrolysis, [31] an electrical resistivity value of 9 lX cm was reported for Cu films. Marzouk et al [37] reported that contaminated copper films with 2 % oxygen and 1 % carbon exhibited a resistivity of 3.5 lX cm for a thickness of 1200 nm.…”

Section: Electrical Characterization Of the Metal Filmsmentioning

confidence: 97%

“…[31] Using the same precursor in the presence of hydrogen by conventional CVD, [37] and nebulized spray pyrolysis, [31] an electrical resistivity value of 9 lX cm was reported for Cu films. Marzouk et al [37] reported that contaminated copper films with 2 % oxygen and 1 % carbon exhibited a resistivity of 3.5 lX cm for a thickness of 1200 nm. The near bulk resistivity value (2.7 lX cm for a thickness of 230 nm) observed in the present study reflects the fact that films contain less than 3 % contamination.…”

Section: Electrical Characterization Of the Metal Filmsmentioning

confidence: 97%

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CVD of Metals Using Alcohols and Metal Acetylacetonates, Part I: Optimization of Process Parameters and Electrical Characterization of Synthesized Films

Premkumar¹,

Bahlawane²,

Kohse‐Höinghaus³

2007

Chemical Vapor Deposition

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A new successful strategy is developed for the production of Ni, Cu, and Co films using commercially available metal acetylacetonates as precursors. Pulsed spray evaporation (PSE) CVD is applied utilizing only alcohols as solvents and reducing agents. The efficiency of the process, with respect to controlling parameters such as pulse width, pulsing frequency, carrier gas flow rate, and concentration of the precursors in the feedstock, is optimized. The growth of metal films as a function of substrate temperature, deposition pressure, and duration of deposition, is examined. Results demonstrate that the metal films grow on various substrates, including glass and SiC, without any incubation time and do not need a seed layer. Resulting resistivities are close to those of the bulk materials for Ni and Cu films, while a value of 150 lX cm, which improves upon annealing, is measured for Co films.

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Section: Electrical Characterization Of the Metal Filmsmentioning

confidence: 97%

Section: Electrical Characterization Of the Metal Filmsmentioning

confidence: 97%

CVD of Metals Using Alcohols and Metal Acetylacetonates, Part I: Optimization of Process Parameters and Electrical Characterization of Synthesized Films

Premkumar¹,

Bahlawane²,

Kohse‐Höinghaus³

2007

Chemical Vapor Deposition

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“…After deposition, three new peaks appear at 2θ = 43.3°, 50.4°and 74.0°for all the runs. These peaks represent the 111, 200 and 220 reflections of pure copper [22,24,25]. The intensity of these peaks is relatively low due to the low amount of copper measured by ICP-MS. No oxide was detected since cuprous oxide (Cu 2 O) and cupric oxide (CuO) should have intense peaks at 2θ = 36.1°and 39°r espectively (111 reflection) [44,45].…”

Section: Xrd Resultsmentioning

confidence: 99%

“…CuCl 2 [21], and it is one of the rare copper precursors commercially available at reasonable price. It was successfully used to deposit copper thin films on planar substrates such as borosilicate glass [22], silicon [23,24], Kapton polymer [25] and metals (Al, Ni and Pd) [26]. At atmospheric pressure, pure copper was obtained between 220 and 400°C under pure hydrogen or using N 2 /H 2 or Ar/H 2 mixtures with H 2 concentrations higher than 50 vol% [22,23,26].…”

Section: ·Kmentioning

confidence: 99%

Fluidized bed chemical vapor deposition of copper nanoparticles on multi-walled carbon nanotubes

Lassègue

Noé

Monthioux

et al. 2017

Surface and Coatings Technology

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OATAO is an open access repository that collects the work of Toulouse researchers and makes it freely available over the web where possible. A B S T R A C TMulti-walled carbon nanotubes tangled in easy-to-fluidize porous balls have been decorated by pure copper nanoparticles using a pre-industrial fluidized bed chemical vapor deposition process. Copper (II) acetylacetonate Cu(acac) 2 was used as precursor. The low precursor volatility led to low deposition rates, responsible for a nonuniformity of the deposit both on the MWCNT balls and from the outer part to the center of the balls. An oxidative pre-treatment of the MWCNTs allowed to increase slightly the deposit weight and uniformity, by creating new nucleation sites on the nanotube surface. It also allowed decreasing the size of Cu nanoparticles by a factor of ten. A decrease of the deposition temperature increased more markedly the deposit weight, by probably favoring the formation of gaseous reactive intermediate species more reactive on the oxidized nanotube surface. A more efficient precursor delivery system would allow reaching higher deposition rates and much more uniform deposits, making possible an industrial production of metallized carbon nanotubes.

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“…This thermal CVD setup has been used to deposit pure copper metal on a variety of substrates including Kapton (polyimide), glass and Si(100) using C u ( a c a c ) 2 and Cu[(HFA)2] as precursors. Results on Kapton (polyimide) are described elsewhere [13]. In this work, the Cu(acac)2 precursor was heated to a selected temperature between 127-147 4-2 ° C (vapor pressure between 4-24 Pa [14]), and pure Ar gas with a flow rate of 100 cm3/min was passed over it.…”

Section: Methodsmentioning

confidence: 99%

Evaluation of copper Chemical-Vapor-Deposition films on glass and Si(100) substrates

et al. 1994

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Abstract. Thin films of pure copper have been deposited on glass and Si(100) substrates using copper acetylacetonate [Cu(acac)2] and copper HexaFluoroAcetylacetonate [Cu(HFA)2] sources. A thermal, cold-wall, reduced pressure (3325-5985 Pa) Metal-Organic Chemical Vapor Deposition (MOCVD) process was employed. The effect of H20 vapor on the grain size, deposition rate, and resistivity was examined. Electrical resistivities of 2.4 gf~ cm for copper films deposited on Si(100) and 3.44 gf~ cm for copper films deposited on glass at substrate temperatures of 265 ° C and a [Cu(acac)2] source temperature of 147 ° C with the use of HzO vapor were measured. When [Cu(HFA)2] was used, the substrate temperature was 385 ° C and the source temperature was 85 ° C. An activation energy for the copper film deposition process was calculated to be 22.2 kJ/mol in the case of the [Cu(acac)2] source. A deposition rate of 11 nm/min was obtained with Cu(acac)2 as the source and the rate was 44.4 nm/min with the Cu(HFA)2 source; both were obtained with the use of H20 vapor. No selectivity was observed with either source for either substrate. The deposited films were fully characterized using XRD, LVSEM, SAXPS, and RBS. 81.15, 68.55, 07.80 As Integrated Circuits (ICs) become more densely packed, aluminum and its alloys are less attractive for use as interconnect lines and multilevel metallization. These alloys have drawbacks such as hillock formation and electromigration failures under the high current densities typically employed in high speed circuitry [1]. Copper has been considered as a promising alternative to aluminum and its alloys. Copper has many attractive properties such as low resistivity, high electromigration resistance and high stress migration resistance. For microelectron-* To whom all correspondence should be addressed. PACS:

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Non-selective copper film growth on Kapton (polyimide) by MOCVD

Cited by 9 publications

References 12 publications

CVD of Metals Using Alcohols and Metal Acetylacetonates, Part I: Optimization of Process Parameters and Electrical Characterization of Synthesized Films

CVD of Metals Using Alcohols and Metal Acetylacetonates, Part I: Optimization of Process Parameters and Electrical Characterization of Synthesized Films

Fluidized bed chemical vapor deposition of copper nanoparticles on multi-walled carbon nanotubes

Evaluation of copper Chemical-Vapor-Deposition films on glass and Si(100) substrates

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