Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition

Chen, Wanjun; Xin, Yajie; Zhang, Kemeng; Deng, Cao; Zhou, Qi; Deng, Xiaochuan; Li, Zhaoji; Zhang, Chao; Zuo, Huiling; Zhou, Qijun; Gao, Wuhao; Xia, Yun; Liu, Chao; Liu, Yawei; Shi, Yijun

doi:10.1109/tdmr.2020.2965980

Cited by 4 publications

(2 citation statements)

References 16 publications

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“…The turn-on signal delay among the 10 Gate contacts is accounted for by means of introducing a network of SPICE resistors, all of which are named as R GP , for the 10 Gate contacts. The parasitic inductance of the Gate Runner metallization consists of not only the self-inductance but also the mutual inductance, and cannot be calculated out by hand or extracted by any commercial simulators, and thus can be usually ignored when modelling the effect of layout parasitics [21][22][23][24]. Another network of resistors, all of which are marked as R AP , is introduced in order to take the parasitic resistance induced by the Anode Pad metallization into consideration.…”

Section: Tcad Simulation Setupmentioning

confidence: 99%

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Liu,

Liang,

Zhou

et al. 2024

IET Power Electronics

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Silicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising option for pulsed power applications; however, the formation of high di/dt has been constrained by the slow current rise transient phase and the turn‐on current heterogeneity over the chip device. In this paper, a practical integrated multi‐cell simulation is performed to physically characterize the turn‐on transient of SiC GTO thyristor. Through examining electrical coupling between adjacent cells caused by both parasitics of electrode metallization and carrier travelling via SiC, the current distributions are observed, and the carrier transport dynamics are analyzed in detail. Furthermore, physical mechanisms dominating the current heterogeneity among multi‐cells are discovered in depth. It is revealed that the current heterogeneity during the turn‐on transient is primarily resulted from the Gate signal delay caused by the Gate Runner metallization, and the lateral interaction from adjacent semiconductor regions adds to this inhomogeneity; however, this situation can be improved once the electrical distance between each Anode contact and the Anode electrode gets lowered. Design method for turn‐on performance improvement is also proposed accordingly. Besides, based on the analysis conducted on the multi‐cell simulation results, the possible reason of the extremely slow current rise transient phase is speculated and experimentally verified. The improvement in the comprehension of SiC GTO's turn‐on transient, which cannot be obtained from the traditional investigation from the viewpoint of one elementary cell, will provide guiding principles helping in directing future efforts to advance the improvement of device design technology.

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Section: Tcad Simulation Setupmentioning

confidence: 99%

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Liu,

Liang,

Zhou

et al. 2024

IET Power Electronics

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“…bridge foil in detonator) and inductors (e.g. motor in machine) [5]. For the purpose of generality, we focus on the case of short PDC, i.e., no loads in PDC besides the parasitic resistor and inductor as presented in Fig.1.…”

Section: Introductionmentioning

confidence: 99%

Ionization Damage Effects of Pulse Discharge Circuit Switched by Anode-Short MOS-Controlled Thyristor

Zhang

et al. 2020

IEEE J. Electron Devices Soc.

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The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capabilities. The anode short MCT (AS-MCT) is distinguished from the conventional MCT by an anode-short structure, which forms an extracting path for the leakage current at the gate-ground and develops a normally-off characteristic. The AS-MCTs are ideal switches for pulse discharge application. As a composite structure made of metal-oxide-silicon and bipolar junction transistors, AS-MCT is susceptible to ionization damage. This work reports the experimental results for the degradation of zero-load (or short) pulse discharge circuit characteristics induced by the ionization damage of its AS-MCT switch following cobalt-60 γ-ray dose up to 9160 Gy(SiO2). The radiation-induced leakage current in AS-MCT accounts for the degradations of charging time and peak surging current of the pulse discharge circuit. These degradations show a "tick"-like dependence on the γ-ray dose which are recoverable after high dose exposures, thousands of Gy(SiO2). From device and circuit physics perspectives, the damages on pulse discharge circuit are modelled, and then, this paper proposes, the mechanism behind the characteristics degradation of pulse discharge circuit from the total ionization dose damage of AS-MCT switch.

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Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di/dt Condition

Liu

Xing

Zhang

et al. 2023

IEEE Trans. Electron Devices

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Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition

Cited by 4 publications

References 16 publications

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor

Ionization Damage Effects of Pulse Discharge Circuit Switched by Anode-Short MOS-Controlled Thyristor

Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di/dt Condition

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