Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

Bastiman, F.; Mohmad, Abdul Rahman; Ng, Jo Shien; David, J.P.R.; Sweeney, S. J.

doi:10.1016/j.jcrysgro.2011.07.036

Cited by 51 publications

(44 citation statements)

References 15 publications

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“…In this case, a high growth rate can kinetically suppress the latter process, leading to a high Bi content with no droplets on the surface. Except for the above growth parameters, As specie was also reported to have some influence on MBE growth of GaAsBi [44,135]. The optimum growth control for Bi incorporatin in GaAs without forming Ga or Bi droplets is less strict when using As4 other than As2 as the As source.…”

Section: Growth Ratementioning

confidence: 99%

“…Equation (2) gives dependence of the incorporated Bi concentration on the growth parameters and fits very well with their experimental results. The various solid and broken lines in Figure 5 are computed from Equation (2) with a certain value of α, b, U 0 and U 1 which can be inferred from change in RHEED intensity [135]. The solid lines in Figure 5 show that Bi concentration increases with decreasing As flux, when holding Bi flux and growth temperature constant.…”

Section: Lu's Gaasbi Growth Modelmentioning

confidence: 99%

“…where the Bi surface coverage, θBi, is given by a revised function based on Langmuir model [135]. In the present case, the Bi flux in the Langmuir isotherm is substituted by the net flux, in which the The first process is the Bi incorporation process in which a Ga atom is inserted between the Bi surface wetting layer and the As-terminated film layer, forming a Bi-Ga-As bond.…”

Section: Lu's Gaasbi Growth Modelmentioning

confidence: 99%

“…θ Bi e U1/KT F Ga aF As + θ Bi e U1/KT F Ga (2) where the Bi surface coverage, θ Bi , is given by a revised function based on Langmuir model [135].…”

Section: Lu's Gaasbi Growth Modelmentioning

confidence: 99%

“…Even without Bi, GaAs grown at temperatures below 300 °C contains a significant amount of native defects such as As antisites (AsGa) [138] and Ga vacancies (VGa) [139]. Upon postgrowth thermal annealing, the As antisites are converted to As clusters [3] leading to high resistivity Except for the above growth parameters, As specie was also reported to have some influence on MBE growth of GaAsBi [44,135]. The optimum growth control for Bi incorporatin in GaAs without forming Ga or Bi droplets is less strict when using As 4 other than As 2 as the As source.…”

Section: Thermal Stability and Bi Diffusionmentioning

confidence: 99%

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Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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Section: Growth Ratementioning

confidence: 99%

Section: Lu's Gaasbi Growth Modelmentioning

confidence: 99%

Section: Lu's Gaasbi Growth Modelmentioning

confidence: 99%

“…θ Bi e U1/KT F Ga aF As + θ Bi e U1/KT F Ga (2) where the Bi surface coverage, θ Bi , is given by a revised function based on Langmuir model [135].…”

Section: Lu's Gaasbi Growth Modelmentioning

confidence: 99%

Section: Thermal Stability and Bi Diffusionmentioning

confidence: 99%

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Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Localization effects and band gap of GaAsBi alloys

Mohmad

Bastiman

Hunter

et al. 2014

Phys. Status Solidi B

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The structural and optical properties of GaAs1−xBix alloys for x up to 0.108 have been investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room temperature (RT), the PL intensity of the GaAs0.97Bi0.03 sample was found to be ∼300 times higher than a GaAs control sample grown at the same temperature (400 °C). PL measurements carried out at 10 K show that when excitation power, Pex was increased from 0.11 to 1140 W cm−2, the PL peak energy blue‐shifts by 80 meV while the full‐width‐at‐half‐maximum reduces from 115 to 63 meV. However, the PL peak emission energy becomes independent of the excitation power at RT. The results indicate the presence of localized energy states in the GaAs0.97Bi0.03 sample, which trap carriers at low temperatures and that the majority of the carriers become delocalized at RT. Furthermore, the temperature dependent PL also shows an S‐shape behavior, which is a signature of localization effects. A theoretical model, which was derived by solving a rate equation was employed. The model successfully reproduces the observed S‐shape behavior and the theory fits well with the experimental data. The RT band gap of GaAs1−xBix for x up to 0.108 has been plotted and compared with the literature.

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Molecular Beam Epitaxy Growth and Properties of GaAsBi and AlAsBi

Zhang

et al. 2019

Bismuth-Containing Alloys and Nanostructures

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Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

Cited by 51 publications

References 15 publications

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Localization effects and band gap of GaAsBi alloys

Molecular Beam Epitaxy Growth and Properties of GaAsBi and AlAsBi

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