Non Topcoat Self-freezing Photoresist for Double Patterning Process

Itō, Kōji; Mita, Michihiro; Wakamatsu, Goji; Anno, Yusuke; Fujisawa, Tomohisa; Osaki, Hitoshi; Hoshiko, Kenji; Tanaka, Hiromitsu; Nishimura, Yukio; Sugiura, Makoto; Yamaguchi, Yoshikazu; Shimokawa, Tsutomu

doi:10.2494/photopolymer.23.199

Cited by 3 publications

(1 citation statement)

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“…ArF immersion lithography has been applied for device high volume manufacturing since device critical CD was 4x nm half pitch. In addition, combination of ArF immersion lithography with multiple patterning allows shrinking minimum pattern size pitch division to multiple [5,6]. For this multi-patterning process, roughness of original resist patterns transfers to patterns after pitch division.…”

Section: Introductionmentioning

confidence: 99%

Structural Changes of Photoresist on Wafer Studied by Pyrolysis-GC/MS Combined with Micro-GPC

Taguchi

Kawai

Otsuki

et al. 2014

J. Photopol. Sci. Technol.

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A novel method for the direct analysis of photoresist pattern was developed on the basis of Pyrolysis-GC/MS combined with micro-GPC. Firstly, a new sampling technique allowed us to collect the surface and the core of the photoresist pattern separately. Moreover, µGPC and Py-GC/MS analyses provide the information for the distribution of resist ingredient inside resist pattern, which includes original polymer, reacted polymer, and photo acid generator through the ArF patterning process. This novel analytical method can provide remarkably helpful information about identifying proper control knobs for lithographic performance of ArF resist and for next generation lithography.

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Section: Introductionmentioning

confidence: 99%