Non-traditional, non-volatile memory based on switching and retention phenomena in polymeric thin films

Krieger, Ju. H.; Spitzer, S. M.

doi:10.1109/nvmt.2004.1380823

Cited by 18 publications

(9 citation statements)

References 10 publications

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“…For instance, in 2004, Krieger et al proposed a structure of a passive layer between electrode and active thin films, which enhanced the extraction of ions from the electrode to create functioning nonvolatile memory cells [32]. Also in 2008, Erokhin and Fontana developed a polymeric memristor [33].…”

Section: Memristor Implementation Typesmentioning

confidence: 99%

Memristor: Models, Types, and Applications

Radwan

Fouda

2015

Studies in Systems, Decision and Control

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The first concept and realization of memory resistor device was proposed by Widrow in 1960 [1]. It was named memistor and had three terminals. The resistance of this memistor was variable and could be controlled and sensed using the control (DC current) and sensing (AC current) terminals. The significant difference between the transistor and the memistor is that the memistor resistance is controlled by the instantaneous time integral of the control current, which is the accumulated charge passing through the memistor. However, the memistor was not linked to the fundamentals of circuit theory because it is an "ill-posed" element, a 3-terminal device is said to be well posed if it has sufficient information to predict the current and voltage associated with all the three terminals when the device is connected to an arbitrary external circuit [2]. Moreover, in 1968, through the Electromagnetic theory, Fano et al. listed that there are four fundamental circuit elements: resistor, capacitor, inductor, and an unknown element [3].However, the first practical mathematical concept and realization was introduced by the father of nonlinear circuits, Prof. Leon Chua, in 1971 in his seminal paper

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Section: Memristor Implementation Typesmentioning

confidence: 99%

Memristor: Models, Types, and Applications

Radwan

Fouda

2015

Studies in Systems, Decision and Control

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“…It has been proven that some types of non-crossing pinched hysteresis curves cannot be described by the memristors [19]. There are titanium dioxide memristor [9], [10], [20], [21], polymeric memristor [22], [23], layered memristor [24], ferroelectric memristor [25], and spin memristive systems [26]- [31], respectively. Williams' solid-state memristors can be combined into devices called crossbar latches, which could replace transistors in future computers [32].…”

Section: Introductionmentioning

confidence: 99%

Fracmemristor: Fractional-Order Memristor

Yuan

2016

IEEE Access

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This paper mainly discusses an interesting conceptual framework: the fractional-order memristor (fracmemristor). It is a challenging theoretical problem to determine what the fracmemristor interpolating characteristics between the memristor and the capacitor or inductor are, and where the positions of the fracmemristor in the Chua's axiomatic element system are. Motivated by this need, in this paper, we introduce an interesting conceptual framework of the fracmemristor, which joins the concepts underlying the fractional-order circuit element and the memristor. We use a state-of-the-art mathematical method, fractional calculus, to analyze the proposed conceptual framework. The term fracmemristor is a portmanteau of the fractional-order memristor. The term fracmemristance refers to the fractional-order impedance of a fracmemristor. First, the relationship between the fracmemristance and the fractance is discussed. Second, the fracmemristances of the purely ideal 1/2-order capacitive fracmemristor and inductive fracmemristor are studied, respectively. The third step is the proposal for the fracmemristances of the purely ideal arbitraryorder capacitive fracmemristor and inductive fracmemristor, respectively. Finally, the fracmemristor is achieved by numerical implementation, and its non-volatility property of memory and nonlinear predictive ability is analyzed in detail experimentally. The predictable characteristics of the fracmemristor are a major advantage when comparing with the classical first-order memristor.

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“…Other devices showing memristive properties were developed based on materials which are alternative to the titanium dioxide: polymeric materials [9], ferroelectric memristors [10], spintronic devices [11], spin-transfer torque magnetoresistances [12], spin memristive systems [13], superconductive materials [14], Mn doped ZnO films [15].…”

Section: Introductionmentioning

confidence: 99%

A Memristive System Based on an Electrostatic Loudspeaker

Troiano

Balzanelli

Pasero

et al. 2015

Advances in Neural Networks: Computational and Theoretical Issues

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Abstract. The memristor (a memory-resistor) is a fundamental twoterminal circuit element with a nonlinear relationship between the integral of the voltage and the charge. In the literature, the research interest in the development of new memristive systems is growing, due to the potential applications as analog memories or as synapses in neuromorphic systems. In this paper, the possibility of using an electrostatic loudspeaker as a memristor-based system is explored. This kind of loudspeakers use a thin flat polarized diaphragm, usually consisting of a plastic sheet coated with a conductive material, between two electrically conductive plates, with a small air gap between them. When an electrostatic field is applied to the plates, a force is exerted on the charged diaphragm, and its resulting movement drives the air on either side of it. To get a memristor, the deformation of the diaphragm is here converted in a resistance value using a strain gauge attached over it. A mathematical model of the system is developed. Simulation results show that the device based on the combination of an electrostatic loudspeaker and a strain gauge has all the properties of the memristive systems.

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Non-traditional, non-volatile memory based on switching and retention phenomena in polymeric thin films

Cited by 18 publications

References 10 publications

Memristor: Models, Types, and Applications

Memristor: Models, Types, and Applications

Fracmemristor: Fractional-Order Memristor

A Memristive System Based on an Electrostatic Loudspeaker

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