Non-Volatile Flash Memory on Ge With an Oxidation-Induced Self-Assembled Charge Trapping Layer

Lee, Choong Hyun; Ding, Xiang; Lan, Zhangsheng; Liu, Jirong; Yan, Chu; Chen, Zhengyang; Zhao, Liang; Zhao, Yi

doi:10.1109/led.2022.3166762

Cited by 4 publications

(1 citation statement)

References 18 publications

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“…For example, the program and erase operations of flash memory induce a high voltage of 20 V in the gate and channel, respectively [2]. The high voltages of the gate and channel induce electric fields in opposite directions, and the program and erase voltages are repeatedly applied to the interface between the a-IGZO channel and the gate dielectric because the flash memory guarantees an endurance of more than 10 5 cycles [21]. Therefore, the instability of the a-IGZO channel should be investigated under positive-negative alternating gate bias stresses.…”

Section: Introductionmentioning

confidence: 99%

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Kim,

et al. 2024

Semicond. Sci. Technol.

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Amorphous InGaZnO (a-IGZO) has attracted a lot of attention as a high-mobility channel material for thin film transistors (TFTs). However, the instability mechanism involving threshold voltage and subthreshold swing in a-IGZO TFTs still requires further investigation. In this study, we investigated the electrical instability of amorphous InGaZnO thin film transistors subjected to alternating positive and negative bias stresses. Based on the respective mechanisms under positive and negative bias stresses, including ionization and spatial movement of oxygen vacancies, bi-directional threshold voltage shifts were observed under alternating bias stress. The subthreshold swing values vary with the bias stress polarity, reflecting the presence and distribution of oxygen vacancies. Our findings reveal a complementary mechanism based on oxygen vacancies, elucidating the behavior under complex bias stress schemes and extending our understanding of instability mechanisms beyond monotonous bias stress.

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Section: Introductionmentioning

confidence: 99%

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Kim,

et al. 2024

Semicond. Sci. Technol.

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Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer With Low Operating Voltage, Large Memory Window, and Negligible Read Latency

Chen,

Huang,

Kuo

et al. 2024

IEEE Electron Device Lett.

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Forming-Free HfO_x-Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Ding

Lan

et al. 2023

IEEE Trans. Electron Devices

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Non-Volatile Flash Memory on Ge With an Oxidation-Induced Self-Assembled Charge Trapping Layer

Cited by 4 publications

References 18 publications

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer With Low Operating Voltage, Large Memory Window, and Negligible Read Latency

Forming-Free HfO_x-Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

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Non-Volatile Flash Memory on Ge With an Oxidation-Induced Self-Assembled Charge Trapping Layer

Cited by 4 publications

References 18 publications

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer With Low Operating Voltage, Large Memory Window, and Negligible Read Latency

Forming-Free HfOx-Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

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Forming-Free HfO_x-Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge