Non-volatile magnetic random access memories (MRAM)

Sousa, R. C.; Prejbeanu, I. L.

doi:10.1016/j.crhy.2005.10.007

Cited by 79 publications

(30 citation statements)

References 71 publications

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“…Two-dimensional patterning of magnetic films and its effect on magnetization dynamics has been widely studied due to its relevance for a fundamental understanding of magnetism as well as applications such as magnetic random access memory [1][2] and patterned magnetic data storage [3][4]. While spin dynamics in idealized geometries such as infinite films or ellipsoids of revolution can be treated analytically, the situation in realistic structures of finite size is more complex due to nonuniform internal fields within the element.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional shape dependence of spin-wave modes in single FePt nanomagnets

et al. 2012

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We report the dependence of the intrinsic spin wave spectra on the three-dimensional shape in single FePtnanomagnetic elements. In contrast to the well-known center and edge modes in flat, circular nanodisks, curved nanomagnets with identical nominal thickness and footprint exhibit a rich multi-mode spectrum with qualitatively different dependence on applied field, such as a low-frequency "pinned" mode. Dynamic micromagnetic modeling shows that the experimentally observed modes originate from different sections of the nanomagnet with vastly different demagnetization field. Thus, controlled shaping of a nanomagnet in all three dimensions creates the possibility of magnetization dynamics by design.2

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Section: Introductionmentioning

confidence: 99%

Three-dimensional shape dependence of spin-wave modes in single FePt nanomagnets

et al. 2012

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“…have been proposed by various scientific groups. [2][3][4] Among nonvolatile random access memory (NVRAM) elements, resistive switching random access memory (ReRAM) has proven itself a promising candidate for future generation technology due to its superior features like high scaling, very simple structure, low power consumption, high resistance ratio, long data retention, high density, high switching speed and compatibility with the complementary metal oxide semiconductor (CMOS) memory technology. [5][6][7] Resistive switching (RS) phenomenon is based on a simple principle of applied electric field stimulated switching of the two (multiple in case of Memristors 8 ) resistive states, i.e., from high resistance state (HRS) to low resistance state (LRS) or vice versa.…”

confidence: 99%

“…Barium Acetate ((CH 3 COO) 2 Ba), Titanium IV isopropoxide (Ti [OCH (CH 3 ) 2 ] 4 ) and Chromium Acetate (Cr(CH 3 COO) 3 ) were used as precursors. In the preparation of the solution, Acetic acid (CH 3 COOH) and 2-methoxy ethanol (C 3 H 8 O 2 ) were also used as solvents.…”

confidence: 99%

Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

Thakre

Kumar

2017

AIP Advances

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An enhanced, repeatable and robust resistive switching phenomenon was observed in Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited by the sol-gel approach and spin coating technique, respectively. An enhanced bistable bipolar resistive switching (BRS) phenomenon without electro-forming process, low switching voltage (∼ 2 V) and moderate retention characteristics of 104 s along with a high Roff/Ron resistance ratio ∼103 was achieved. The current conduction analysis showed that the space charge limited conduction (SCLC) and Schottky emission conduction dominate in the high voltage range, while thermally active charge carriers (ohmic) in the lower voltage range. The impedance spectroscopy study indicates the formation of current conducting path and rupturing of oxygen vacancies during SET and RESET process.

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“…The impressive perspectives in enhancing non-volatile magnetic memory modules [4], micro-wave generators of GHz frequency [5,6] and nano-scale magnetic sensors led to the development of the new promising field -spintronics [7]. The simplest spintronic devices, spin valves, were studied in detail (see, e.g., [5,8,9]).…”

Section: Introductionmentioning

confidence: 99%

Coercivity reduction in a two-dimensional array of nano-particles

et al. 2014

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We report on theoretical investigation of the magnetization reversal in two-dimensional arrays of ferromagnetic nano-particles with parameters of cobalt. The system was optimized for achieving the lowest coercivity in an array of particles located in the nodes of triangular, hexagonal and square grids. Based on the numerical solution of the non-stochastic Landau-Lifshitz-Gilbert equation we show that each particle distribution type is characterized with a proper optimal distance, allowing to lower the coercivity values for approximately 30% compared with the reference value obtained for a single nano-particle. It was shown that the reduction of coercivity occurs even if the particle position in the array is not very precise. In particular, the triangular particle arrangement maintained the same optimal distance between the particles under up to 20% random displacements of their position within the array.

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Non-volatile magnetic random access memories (MRAM)

Cited by 79 publications

References 71 publications

Three-dimensional shape dependence of spin-wave modes in single FePt nanomagnets

Three-dimensional shape dependence of spin-wave modes in single FePt nanomagnets

Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

Coercivity reduction in a two-dimensional array of nano-particles

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