Non-volatile ternary memristors based on a polymer containing a carbazole donor with CuO NPs embedded

Dou, Feng; Zhao, Xiaofeng; Zhang, Wanying; Zhang, Yingna; Ma, Dongge; Chen, Jiangshan; Wang, Shuhong; Wang, Cheng

doi:10.1039/d1nj04711f

Cited by 4 publications

(1 citation statement)

References 52 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this region, the slope of the fitted curve is 1.89, which follows the square law (I∝V 2 ) and is called the trap-filled limited current (TFLC). [44,45] When the bias voltage reaches V th1 , all traps are filled and the device switches to ON1 state. In this region, the current is approximately proportional to the square of the voltage (I∝V 1.88 ), which corresponds to Child's law, known as the space charge limited current (SCLC) region.…”

Section: Mechanism Analysis Of Switching Behaviormentioning

confidence: 99%

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites

Dou

Zhao

Gao

et al. 2022

Macro Chemistry & Physics

Self Cite

View full text Add to dashboard Cite

Multi-level memory can greatly improve information density, so it has been widely studied. In this study, a carbazole-based donor-acceptor polymer poly[2,7-9-(heptadecan-9-yl)-9H-carbazole-alt-7H-benzimidazo[2,1a]benz[de]isoquinolin-7-one] (PCz-BB) is synthesized, which exhibits flash-type ternary memory behavior. Further, CdS nanoparticles (NPs) are embedded into the prepared polymer to enhance the storage performance. The current-voltage (I-V) characteristics of memory devices based on PCz-BB:CdS composites and the effect of the embedding ratio of CdS NPs on the memory devices are studied. It is verified that the ON2/ON1/OFF current ratios of the devices at low CdS embedding concentrations are improved, and the threshold voltages are also reduced. The memory device based on the optimal embedding concentration (3 wt% CdS) exhibits a high ON2/ON1/OFF current ratio of 18631:72:1, a low threshold voltage of −0.40/−1.20 V, and excellent stability. The mechanism of resistive switching is explained by the theory of charge traps and conductive filaments. This work provides a new avenue for high-performance multi-level organic electrical storage materials.

show abstract

Section: Mechanism Analysis Of Switching Behaviormentioning

confidence: 99%

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites

Dou

Zhao

Gao

et al. 2022

Macro Chemistry & Physics

Self Cite

View full text Add to dashboard Cite

show abstract

Regulating WORM/Flash electrical memory behavior of metallopolymers through varying metal centers

Wang

Cheng²,

Xia³

et al. 2023

Journal of Organometallic Chemistry

View full text Add to dashboard Cite

Transition metal oxide based resistive random-access memory: An overview of materials and device performance enhancement techniques

Yadav,

Dwivedi,

Verma

et al. 2024

Journal of Science: Advanced Materials and Devices

View full text Add to dashboard Cite

Non-volatile ternary memristors based on a polymer containing a carbazole donor with CuO NPs embedded

Abstract: With the rapid development of information technology, binary memory may not meet the requirements of future information and communication technology, hence multilevel memory is widely studied. Herein, a donor-acceptor-type polymer...

Cited by 4 publications

References 52 publications

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites

Regulating WORM/Flash electrical memory behavior of metallopolymers through varying metal centers

Transition metal oxide based resistive random-access memory: An overview of materials and device performance enhancement techniques

Contact Info

Product

Resources

About