Nonaqueous Nanoscale Metal Transfer by Controlling the Stickiness of Organic Film

Lee, Kyeongmi; Oh, Seung Hwan; Kang, Nam Goo; Lee, Jae‐Suk; Kim, Dong Yu; Lee, Heon; Jung, Gun Young

doi:10.1021/la801019d

Cited by 16 publications

(12 citation statements)

References 14 publications

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“…After detaching the glass stamp from the polymer layer (Figure 7d), fabrication of the organic memory devices with an 8 × 8 cross‐bar array and a junction area of 2 μm × 2 μm was completed. Lee et al109 also successfully fabricated nanoscale metal patterns for organic memory devices using the same technique. A DMT method featuring a two‐step thermal treatment was capable of transferring metal lines with a 70‐nm half‐pitch to an organic active layer.…”

Section: Strategies For Memory Applicationsmentioning

confidence: 99%

Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

Cho

Song

et al. 2011

Adv Funct Materials

458

329

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In recent years, organic resistive memory devices in which active organic materials possess at least two stable resistance states have been extensively investigated for their promising memory potential. From the perspective of device fabrication, their advantages include simple device structures, low fabrication costs, and printability. Furthermore, their exceptional electrical performances such as a nondestructive reading process, nonvolatility, a high ON/OFF ratio, and a fast switching speed meet the requirements for viable memory technologies. Full understanding of the underlying physics behind the interesting phenomena is still challenging. However, many studies have provided useful insights into scientific and technical issues surrounding organic resistive memory. This Feature Article begins with a summary on general characteristics of the materials, device structures, and switching mechanisms used in organic resistive devices. Strategies for performance enhancement, integration, and advanced architectures in these devices are also presented, which may open a way toward practically applicable organic memory devices.

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Section: Strategies For Memory Applicationsmentioning

confidence: 99%

Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

Cho

Song

et al. 2011

Adv Funct Materials

458

329

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“…The three transfer-printing methods basically rely on the differences in adhesion to transfer NWs, metal films, and even entire NW devices from weakly adhesive donor substrates to more strongly adhesive receiver substrates when these two substrates are brought into close physical contact. Previously reported transfer-printing methods, such as microcontact printing, nanoscale-transfer printing, and metal transfer printing (16,(19)(20)(21)(22)(23), have been used mainly to transfer metal films to receiver substrates by using PDMS stamps. Our methods significantly broaden the transferred substances from metals to the entire NW devices with not only PDMS but also tapes.…”

mentioning

confidence: 99%

Fabricating nanowire devices on diverse substrates by simple transfer-printing methods

Lee

Kim

Zheng

2010

Proc. Natl. Acad. Sci. U.S.A.

130

105

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The fabrication of nanowire (NW) devices on diverse substrates is necessary for applications such as flexible electronics, conformable sensors, and transparent solar cells. Although NWs have been fabricated on plastic and glass by lithographic methods, the choice of device substrates is severely limited by the lithographic process temperature and substrate properties. Here we report three new transfer-printing methods for fabricating NW devices on diverse substrates including polydimethylsiloxane, Petri dishes, Kapton tapes, thermal release tapes, and many types of adhesive tapes. These transfer-printing methods rely on the differences in adhesion to transfer NWs, metal films, and devices from weakly adhesive donor substrates to more strongly adhesive receiver substrates. Electrical characterization of fabricated NW devices shows that reliable ohmic contacts are formed between NWs and electrodes. Moreover, we demonstrated that Si NW devices fabricated by the transfer-printing methods are robust piezoresistive stress sensors and temperature sensors with reliable performance.S emiconductor nanowires (NWs), because of their unique physical and chemical properties, have great potential for applications in the areas of electronics (1-3), photonics (4-7), and bio/chemical sensors (8-13), and the current state of the art of NW devices has been reviewed in refs. 14 and 15. In particular, when semiconductor NW devices are fabricated on flexible substrates, they function as versatile building blocks for high performance flexible and/or transparent electronics (16, 17) with possible extension to flexible displays, touch screens, flexible solar cells, and conformable sensors (8,16,17). To realize these NWbased applications, great efforts have been devoted to the fabrication of NW devices on flexible/transparent substrates with methods including conventional photo-and electron beam lithography (6)(7)(8)17). Although NW devices have been successfully fabricated on plastics, glass, and 17,18), the choice of device substrates is generally restricted because many useful flexible/transparent substrates, such as polydimethylsiloxane (PDMS) and tapes, suffer from problems such as shrinkage or degradation at the processing temperature, poor adhesion to NWs and metal electrodes, incompatibility with solvents and acids, and being too flexible to be handled for the lithography step.Here we report three simple transfer-printing methods to fabricate NW devices on diverse substrates including PDMS, Petri dishes, Kapton tapes, thermal release tapes, and many types of adhesive tapes. The three transfer-printing methods basically rely on the differences in adhesion to transfer NWs, metal films, and even entire NW devices from weakly adhesive donor substrates to more strongly adhesive receiver substrates when these two substrates are brought into close physical contact. Previously reported transfer-printing methods, such as microcontact printing, nanoscale-transfer printing, and metal transfer printing (16,(19)(20)(21)(22)(23), have been used...

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“…At a detachment temperature of 95 °C, the PdAu NRB array with uniform 15 nm nanogaps was faithfully transferred onto the PS substrate across the entire transfer area of 2.25 cm 2 (Figure S3, Supporting Information). We found that, at a detachment temperature of less than 80 °C, the transfer area of the PdAu NRB array was much smaller, which we attributed to the reduced stickiness of the polymer substrate . Finally, titanium (Ti) and Au were deposited through a shadow mask to create top‐contact electrodes for H 2 sensing (Figure e).…”

Section: Resultsmentioning

confidence: 99%

Highly Stable and Ultrafast Hydrogen Gas Sensor Based on 15 nm Nanogaps Switching in a Palladium–Gold Nanoribbons Array

Pak

Jeong

Alaal

et al. 2018

Adv Materials Inter

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Palladium (Pd) nanogap hydrogen gas (H2) sensors based on the large volume expansion of β phase palladium hydride (β‐PdH) are highly promising, owing to their fast and accurate sensing capability at room temperature in air. However, such sensors do not work well at H2 concentrations below 1%. At such low H2 concentrations, Pd exists as α‐PdH, which has a slow and insufficient volume expansion and cannot completely close nanogaps. Furthermore, the lattice strains induced from the phase transition (α‐PdH → β‐PdH) behavior degrade the stable and repeatable long‐term sensing capability. Here, these issues are resolved by fabricating an array of periodically aligned alloyed palladium–gold nanoribbons (PdAu NRB) with uniform 15 nm nanogaps. The PdAu NRB sensor enables highly stable and ultrafast H2 sensing at the full detection range of H2 concentrations from 0.005% to 10% along with the excellent limit of detection (≈0.0027%), which is sufficiently maintained even after seven months of storage in ambient atmosphere. These breakthrough results will pave the way for developing a practical high‐performance H2 sensor chip in the future hydrogen era.

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Nonaqueous Nanoscale Metal Transfer by Controlling the Stickiness of Organic Film

Cited by 16 publications

References 14 publications

Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

Fabricating nanowire devices on diverse substrates by simple transfer-printing methods

Highly Stable and Ultrafast Hydrogen Gas Sensor Based on 15 nm Nanogaps Switching in a Palladium–Gold Nanoribbons Array

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