NONCOMMUTATIVE STRUCTURE OF GaAs QUANTUM WELL INTERFACES AND INEQUIVALENT INTERFACE IMPURITY INCORPORATION

Carbon incorporation in GaAs/Al0.2Ga0.8As triple quantum wells and its effect on laser performance

“…We have recently reported that the GaAs layers grown at such a CO background do indeed show a high rate of C incorporation and the acceptor concentration incorporated into GAAs layers is proportional to the CO background pressure, if all the other conditions remain the same [10]. There is also other evidence showing incorporation of C into an AlGaAs/GaAs material system [11][12][13][14][15][16]. We believe that the low energy luminescence of the triple QWs grown on (100) substrate, peaking at about 1.548 eV, is related to carbon impurities, most of which are the shallow impurities located near the interfaces of the Al 0.2 Ga 0.8 As/GaAs QWs.…”

“…We believe that the low energy luminescence of the triple QWs grown on (100) substrate, peaking at about 1.548 eV, is related to carbon impurities, most of which are the shallow impurities located near the interfaces of the Al 0.2 Ga 0.8 As/GaAs QWs. The luminescence tail at the low energy side is probably symbolizing the transition of electron-toacceptor in the wells [12][13][14][15]. It is reported by Petroff et al [11] and Miller et al [12] that the presence of carbon degrades the smoothness of the growing surface of AlGaAs layers due to its growth-inhibiting nature, Photoluminescence spectra (at 10 K) of the triple quantum wells grown on GaAs substrates misoriented by 0 • and 6 • , respectively, The dotted lines are two Gaussians being decomposed from the experimental spectrum of the untilted samples.…”

Influence of interface interruption on spin relaxation in GaAs (110) quantum wells

“…In undoped (1 1 0) QWs, we attribute this drop to interface incorporation of impurities or/and traps. Ko¨hrbruck et al [21] and Bimberg et al [22] have observed that the accumulation of shallow impurities and traps at the inverted GaAs-on-AlGaAs interface strongly increases with growth interruption time and QWs total luminescence efficiency rapidly deteriorates when the growth interruption time exceeds 30 s. A large number of acceptor-like defects occur when there is a long growth interruption at inverted interface [23]. The electron-hole exchange interaction may remain important in (1 1 0) QWs even above 20 K [24].…”

Al concentration control of epitaxial AlGaN alloys and interface control of GaN/AlGaN quantum well structures

“…Bimberg et al had reported that the QW peak shifted to a longer wavelength with interruption time in the GaAs/AlGaAs QW. 17 It is assumed the difference in this result is due to the QW growth temperature. We can identify two possible reasons for this blueshift with interruption time in the GaN/AlGaN QW.…”