Nondestructive analysis of ultrashallow junction implant damage by combined technology of thermal wave and spectroscopic methods

Hovinen, M.; Opsal, Jon

doi:10.1116/1.1446453

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Low Thermal Budget Activation of B in Si

Bourdon

Halimaoui

Talbot

et al. 2006

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors

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Advanced devices may today require implantation and annealing steps after the metallic interconnection realization. Depending on the application, a thin p-doped layer has to be formed after wafer bonding. The issue, in such a case, is to correctly anneal the Boron implanted layer without degrading the buried devices and interconnections which lies at a depth around 3pim below the surface. Here, we propose to study different way to anneal this thin p-doped layer. Low energy and low dose implantations are performed without reaching the amorphisation threshold. Long thermal annealing at 400°C (RTP) and UV laser annealing are investigated through sheet resistance, thermal wave, SIMS or TEM. On one hand, a significant activation is obtained with RTP at temperature as low as 400°C and that Boron is activated with a better activation rate with B+ than with BF2+. On the other hand, we achieve a much better activation with laser annealing as compared to RTP regardless of the implantation conditions.

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