The facets propagation during silicon and SiGe epitaxial growth has been studied in terms of morphology and kinetics. In a similar way the faceting effects during chemical etching of monocrystalline silicon have been examined. In both cases, the appearance of certain facets in certain experimental conditions have been explained on the basis of activation energies of the growth kinetics of the main high density crystal planes.

No abstract

No abstract

No abstract

No abstract