2015
DOI: 10.1103/physrevb.92.205305
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Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure

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Cited by 22 publications
(31 citation statements)
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“…It is used herein to provide the detailed 3D description of the biomineral crystal. Previous works have shown that spatial resolution of a few tens of nanometres, strain sensitivity of a few 10 -4 and lattice rotation sensitivity of 0.005° are reachable 5 . This section covers many aspects of the Bragg ptychography procedure: experiments, preliminary data analysis, inversion procedure, and spatial resolution.…”
Section: -3d Bragg Ptychography: From Data Acquisition To Image Analysismentioning
confidence: 99%
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“…It is used herein to provide the detailed 3D description of the biomineral crystal. Previous works have shown that spatial resolution of a few tens of nanometres, strain sensitivity of a few 10 -4 and lattice rotation sensitivity of 0.005° are reachable 5 . This section covers many aspects of the Bragg ptychography procedure: experiments, preliminary data analysis, inversion procedure, and spatial resolution.…”
Section: -3d Bragg Ptychography: From Data Acquisition To Image Analysismentioning
confidence: 99%
“…Furthermore, as the preliminary analysis of the Bragg diffraction data set evidenced the presence of mis-oriented crystalline domains (presence of several Bragg maxima along the rocking curve, Supplementary Figure 5B), a crystalline displacement field was introduced, mimicking local strain and/or orientations 5 . To this aim, a complex-valued function was introduced to describe the sample, with amplitude and phase related respectively to the sample density and projection of the crystalline displacement 5 . The sample was divided into several domains, with lateral dimensions of 220 × 290 nm 2 and elongated along the thickness direction (according to CARS results and preliminary test inversions).…”
Section: Fig 4 (Suppl): Imaging the Illumination Complex-valued Funmentioning
confidence: 99%
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“…The retrieved 3D effective electron density map contains information on both electron density distribution and crystalline displacements within the sample [9]. From the crystalline displacement information, one can derive 3D strain and rotation maps of the probed crystalline plane family [10]. Spatial resolutions in the 10 nm range can be obtained with strain sensitivity in the order of a few times 10 −4 [11].…”
Section: Introductionmentioning
confidence: 99%
“…19,20 Similar lattice rotation and distortion effects are observed in ptychography studies of III-V heterostructures. 21 Nanobeam diffraction studies of Si/SiGe structures show that the lattice of the Si QW is distorted by the relaxation of the SiGe substrate 22 and by stresses imparted on the semiconductor through interfaces with metal electrodes. 23 Other nanobeam diffraction studies have probed the strain distribution over lateral lengths scales of microns in Ge microstripes, 24 heteroepitaxial Ge, 25 and SiGe via rapid mapping techniques.…”
Section: Introductionmentioning
confidence: 99%