Nonequilibrium Quantum Transport Properties of a Silver Atomic Switch

Wang, Zhongchang; Kadohira, Takuya; Tada, Tomofumi; Watanabe, Satoshi

doi:10.1021/nl0711054

Cited by 58 publications

(44 citation statements)

References 35 publications

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“…This agrees well with the two remarkably lowered bands in the band-structure plot, and is further verified by the non-equilibrium quantum transport calculations (Supplementary Fig. S3)2223, showing a small transmission coefficient at E F . Structurally, the creation and stabilization of the localized states are associated with the spontaneous lattice distortions (versus bulk), which are characterized by a substantial length imbalance for the La–Ti bonds (˜0.04 Å), accompanied by a considerable increase in distance between Ti1 (Ti2) and apical O ions (˜0.05 Å) and by a decrease (increase) of the in-plane Ti1–O (Ti2–O) distances ˜0.05 Å (˜0.04 Å) (Supplementary Fig.…”

Section: Discussionsupporting

confidence: 87%

“…All atoms in the supercells were fully relaxed till the magnitude of force on each atom fell <0.05 eV Å −1 . Electron transport were calculated using the state-of-the-art quantum transport technique, that is, the fully self-consistent non-equilibrium Green's function method combined with the DFT22, which was implemented in the Atomistix Toolkit code23. The model used for calculating the transport can be schematically divided into the left semi-infinite electrode, scattering region and the right semi-infinite electrode (Supplementary Fig.…”

Section: Methodsmentioning

confidence: 99%

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Dimensionality-driven insulator–metal transition in A-site excess non-stoichiometric perovskites

et al. 2010

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Coaxing correlated materials to the proximity of the insulator–metal transition region, where electronic wavefunctions transform from localized to itinerant, is currently the subject of intensive research because of the hopes it raises for technological applications and also for its fundamental scientific significance. In general, this tuning is achieved by either chemical doping to introduce charge carriers, or external stimuli to lower the ratio of Coulomb repulsion to bandwidth. In this study, we combine experiment and theory to show that the transition from well-localized insulating states to metallicity in a Ruddlesden-Popper series, La0.5Srn+1−0.5TinO3n+1, is driven by intercalating an intrinsically insulating SrTiO3 unit, in structural terms, by dimensionality n. This unconventional strategy, which can be understood upon a complex interplay between electron–phonon coupling and electron correlations, opens up a new avenue to obtain metallicity or even superconductivity in oxide superlattices that are normally expected to be insulators.

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Section: Discussionsupporting

confidence: 87%

Section: Methodsmentioning

confidence: 99%

Dimensionality-driven insulator–metal transition in A-site excess non-stoichiometric perovskites

et al. 2010

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“…Though several intriguing results, both experimental 3,6-8 and theoretical, 9,10 have already been obtained concerning this switch, its actual working mechanism has not been well clarified yet. Accordingly, we measured the switching time of a Ag 2 S atomic switch with a nanogap as a function of bias voltage and temperature.…”

mentioning

confidence: 99%

Rate-Limiting Processes Determining the Switching Time in a Ag₂S Atomic Switch

Nayak

Tamura

Tsuruoka

et al. 2010

J. Phys. Chem. Lett.

110

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The switching time of a Ag 2 S atomic switch, in which formation and annihilation of a Ag atomic bridge is controlled by a solid-electrochemical reaction in a nanogap between two electrodes, is investigated as a function of bias voltage and temperature. Increasing the bias voltage decreases the switching time exponentially, with a greater exponent for the lower range of bias than that for the higher range. Furthermore, the switching time shortens exponentially with raising temperature, following the Arrhenius relation with activation energy values of 0.58 and 1.32 eV for lower and higher bias ranges, respectively. These results indicate that there are two main processes which govern the rate of switching, first, the electrochemical reduction Ag þ þ e -fAg and, second, the diffusion of Ag þ ions. This investigation advances the fundamental understanding of the switching mechanism of the atomic switch, which is essential for its successful device application.SECTION Electron Transport, Optical and Electronic Devices, Hard Matter N anoionics-based resistive switching devices have been attracting much attention in recent years to overcome the physical and economical limitations of current semiconductor technology. 1 A lot of research has been aimed at finding a reliable switching mechanism that can permit ever smaller and more powerful electronics. 2 Recently, we have developed a conceptually new nanodevice called an atomic switch, in which formation and annihilation of a metal atomic bridge across a nanogap between a solid-electrolyte electrode and a counter metal electrode is controlled by a solid-electrochemical reaction. 3 The switching operation can be achieved by only changing the polarity of the bias voltage applied to either electrode. For instance, applying a positive bias voltage to the solid-electrolyte electrode, the metal ions in the electrode reduce to metal atoms, forming a conductive atomic bridge between the electrodes. This decreases the resistance between the two electrodes to a certain ON resistance, which means that the switch is turned ON. When the polarity of the applied voltage is reversed, the metal atoms in the conductive atomic bridge are oxidized and are incorporated back into the solid-electrolyte electrode. This annihilates the conductive bridge between the two electrodes, turning the switch OFF. Similar controlled formation and annihilation of an atomic bridge has also been achieved in an ionic conductive material sandwiched between two electrodes using the solid-electrochemical reaction. 4 The ease of operation and simple structure of the atomic switch make it suitable for configuring logic gates 3 and memory devices. 4 In addition, its unique features, namely, low ON resistance, scalability down to nanometer size, low power consumption, and operation at room temperature, enable the development of a novel programmable logic device 5 that can achieve all functions with a single chip.Because the operating mechanism of the atomic switch is very different from that of conventional semicond...

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“…We further calculated transport properties of these systems using the fully self-consistent nonequilibrium Green's function method combined with the DFT, 18 which is implemented in Atomistix Toolkit code. 19 Fig.…”

Section: Quantum Electron Transport Through Srtio 3 : Effects Of Dopamentioning

confidence: 99%

Quantum electron transport through SrTiO3: Effects of dopants on conductance channel

Wang

Tsukimoto

Saito

et al. 2009

Applied Physics Letters

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Enhanced leakage current performance and conduction mechanisms of Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 bilayered thin films J. Appl. Phys. 112, 074113 (2012) In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard xray photoelectron spectroscopy Appl. Phys. Lett. 101, 143501 (2012) Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film J. Appl. Phys. 112, 073101 (2012) Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO3 interface Appl. Phys. Lett. 101, 133506 (2012) Cross-plane electronic and thermal transport properties of p-type La0.67Sr0.33MnO3/LaMnO3 perovskite oxide metal/semiconductor superlattices

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Nonequilibrium Quantum Transport Properties of a Silver Atomic Switch

Cited by 58 publications

References 35 publications

Dimensionality-driven insulator–metal transition in A-site excess non-stoichiometric perovskites

Dimensionality-driven insulator–metal transition in A-site excess non-stoichiometric perovskites

Rate-Limiting Processes Determining the Switching Time in a Ag₂S Atomic Switch

Quantum electron transport through SrTiO3: Effects of dopants on conductance channel

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Nonequilibrium Quantum Transport Properties of a Silver Atomic Switch

Cited by 58 publications

References 35 publications

Dimensionality-driven insulator–metal transition in A-site excess non-stoichiometric perovskites

Dimensionality-driven insulator–metal transition in A-site excess non-stoichiometric perovskites

Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch

Quantum electron transport through SrTiO3: Effects of dopants on conductance channel

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Rate-Limiting Processes Determining the Switching Time in a Ag₂S Atomic Switch