Nonhomogeneous materials with cracks

Sih, G. C.; Chen, E. P.

doi:10.1007/978-94-009-8340-3_2

Cited by 4 publications

(2 citation statements)

References 1 publication

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“…In the case of a crack in a homogeneous medium, the stress field near the crack-tip could be identified separately for mode-I (opening mode) and mode-II (shearing mode) loading and the corresponding parameters are labelled as K I and K II . But, in the case of an interface crack in a bi-material joint, the tensile and shear effects near the crack-tip are intrinsically inseparable [1]. This implies that for a far field tensile loading, the loading near the crack-tip is a combination of mode-I and mode-II loading.…”

Section: Introductionmentioning

confidence: 99%

Determination of Stress Intensity Factors for an Interfacial Crack in a Bi-Material by Digital Photoelasticity

Ravichandran

Ramesh

2004

AMM

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The main sources of error in the determination of stress intensity factors (SIFs) for an interface crack in a bi-material by conventional photoelasticity are the measurement of the positional co-ordinates of the data point and the fringe order. In the present work, use of two digital photoelasticity methods for collecting these data is discussed. SIFs are evaluated using constant radius method and a least squares approach based on the singular stress field equation. The need for developing a multi-parameter stress field solution for evaluating SIF is highlighted.

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Section: Introductionmentioning

confidence: 99%

Determination of Stress Intensity Factors for an Interfacial Crack in a Bi-Material by Digital Photoelasticity

Ravichandran

Ramesh

2004

AMM

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“…The stress field developed ahead of the tip of a plane crack propagating along an arbitrary direction, x, can be given as [25]:…”

Section: Experimental Determination Of Pdps By Using Crack-tip Stress...mentioning

confidence: 99%

Spatially resolved Raman piezospectroscopy for nondestructive evaluation of residual stress in β-Ga₂O₃ films

Hara

Zhu

Deng

et al. 2023

J. Phys. D: Appl. Phys.

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In this paper, the piezospectroscopic effect for β-Ga2O3, i.e. the spectral band shift in response to strain/stress, has been calibrated from the indentation method by using spatially resolved Raman spectroscopy for quantitative stress evaluation of Ga2O3 devices, taking advantage of the crack-tip tensile stress field and the spatial probe deconvolution. A series of Vickers indentation prints were introduced on (010) and (-201) Ga2O3 single crystals, and the relationships between observed band shifts and residual stresses were clarified to determine the phonon deformation potentials of the Raman bands. Accordingly, a quantitative analysis of the residual stress field in a Ga2O3 thin film grown on (0001) sapphire by plasma assisted pulsed laser deposition was shown as an example, which revealed the presence of a gradient of incompletely released stress in the depth direction of the film.

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Quasi-static mode III fracture in a nonhomogeneous viscoelastic body

Herrmann

Schovanec

1990

Acta Mechanica

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Nonhomogeneous materials with cracks

Cited by 4 publications

References 1 publication

Determination of Stress Intensity Factors for an Interfacial Crack in a Bi-Material by Digital Photoelasticity

Determination of Stress Intensity Factors for an Interfacial Crack in a Bi-Material by Digital Photoelasticity

Spatially resolved Raman piezospectroscopy for nondestructive evaluation of residual stress in β-Ga₂O₃ films

Quasi-static mode III fracture in a nonhomogeneous viscoelastic body

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Nonhomogeneous materials with cracks

Cited by 4 publications

References 1 publication

Determination of Stress Intensity Factors for an Interfacial Crack in a Bi-Material by Digital Photoelasticity

Determination of Stress Intensity Factors for an Interfacial Crack in a Bi-Material by Digital Photoelasticity

Spatially resolved Raman piezospectroscopy for nondestructive evaluation of residual stress in β-Ga2O3 films

Quasi-static mode III fracture in a nonhomogeneous viscoelastic body

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Spatially resolved Raman piezospectroscopy for nondestructive evaluation of residual stress in β-Ga₂O₃ films