Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs

Abstract

In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by using nonlinear quantum kinetic theory based on a non-equilibrium statistical ensemble formalism (NESEF). In the present paper, these results are compared with calculations using Monte Carlo modelling simulations and experimental measurements. Both n-type and p-type materials, in the presence of intermediate to high electric fields, are considered for several temperatures and carrier concentrations. The agreement between the results obtained using nonlinear quantum kinetic theory, with those of Monte Carlo calculations and experimental data is remarkably good, thus satisfactorily validating the NESEF.

Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K

“…This observation suggests that a strained Si/SiGe heterostructure has the potential for amplifying space charge waves within a frequency range similar to that of an n-GaAs thin film, albeit at low temperatures. To carry out the simulations, we introduce an input signal, and it was applied in the input coupling element, see Equation (6).…”

“…The significance of these applications lies in their crucial role in high-frequency communication systems and photonics. Numerous materials, including GaAs, GaN, InP, and InN, exhibit the negative differential conductance phenomenon, when subjected to high electric fields at room temperature [6]. Unfortunately, most of these compound materials are incompatible with silicon technology.…”

InN/XS2 (X = Zr, Hf) vdW heterojunctions: promising Z-scheme systems with high hydrogen evolution activity for photocatalytic water splitting

“…Group-III nitride monolayers (AlN, GaN, and InN) are widely used in various devices owing to their high thermal conductivity and high-speed data transfer capability, 12–14 among which InN is a good candidate for optical devices with high carrier mobility and small band gaps in the infrared spectrum. 15,16 In addition, Sumithra et al prepared ZnO:InN oxynitride based on InN as the photocatalytic system to decompose water into H 2 , and InN was experimentally realized using synthesis methods of chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).…”

“…The more negative photogenic electrons can reduce H + to H 2 , while the more positive photogenic holes can oxidize H 2 O to O 2 , which effectively expands the window of a redox reaction to achieve excellent photocatalytic overall water-splitting properties. 10,11 Group-III nitride monolayers (AlN, GaN, and InN) are widely used in various devices owing to their high thermal conductivity and high-speed data transfer capability, [12][13][14] among which InN is a good candidate for optical devices with high carrier mobility and small band gaps in the infrared spectrum. 15,16 In addition, Sumithra et al prepared ZnO:InN oxynitride based on InN as the photocatalytic system to decompose water into H 2 , and InN was experimentally realized using synthesis methods of chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).…”

Investigation of multiphoton photocurrent in SiC using phase-modulated femtosecond laser pulses

“…Wide-bandgap semiconductor materials such as gallium nitride, gallium phosphide, and indium gallium nitride proved promising owing to their efficient electron mobility and durability for optoelectronics. On the other hand, these semiconductors excel in nonlinear optoelectronics that assist in developing cutting-edge applications [4][5][6][7][8][9][10][11] .…”