Nonlinear Competition between Stimulated Brillouin-Scattered Light Waves in Plasmas

Berger, R. L.

doi:10.1103/physrevlett.51.1554

Cited by 5 publications

(4 citation statements)

References 11 publications

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“…It was observed that, SBS and the subsequent gain can be studied in a noncentrosymmetric crystal if one uses the density matrix formulations [ 121. The non-linear competition between forward and backward scattered modes was studied by Berger [13]. The SBS instabilities have been observed experimentally in the near quarter critical density region of CO2 [14].…”

Section: Introductionmentioning

confidence: 99%

Stimulated Brillouin scattering in a centrosymmetric semiconductor plasma

1994

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Based upon the electromagnetic treatment, stimulated Brillouin scattering (SBS) in a centrosymmetric, doped semiconductor which is subjected to a transverse magnetic field is investigated analytically. The origin of this nonlinear interaction is considered to be found in the third order optical susceptibility arising due to non-linear current density and acousto-optic polarization of the medium. The threshold condition is obtained for the onset of the SBS. The effective Brillouin susceptibility and the resulting gain is determined using the coupled mode scheme. Using the effective third order polarization so achieved, authors have also calculated the transmitted intensity and Brillouin cell efficiency. The effect of magnetic field and doping on threshold field and Brillouin gain is also studied. Numerical estimations are made for n-InSb at 77 K duly shined by a pulsed 1 0 . 6 ~ CO, laser. The gain constant is significantly enhanced under high power pulsed excitation below the damage threshold and under the influence of a transverse magnetostatic field when the cyclotron frequency is less than the acoustic wave frequency. The required threshold electric field for the onset of the SBS process is also reduced significatly in the presence of a magnetostatic field. The minimum cell length required to achieve optical phase conjugation is found to be 0.45 pm.

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Section: Introductionmentioning

confidence: 99%

Stimulated Brillouin scattering in a centrosymmetric semiconductor plasma

1994

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“…Under these circumstances, the threshold value of the pump amplitude for the onset of SBS can be obtained from (15) as The applied electric field (E,) should be larger than IEothll for the growth of the backward scattered mode. The Brillouin gain constant well above the threshold electric field is obtained as…”

Section: Lightly Doped Semiconductorsmentioning

confidence: 99%

“…From the above relation we can determine the nature of the threshold for the onset of SBS by setting Ped(ml) = 0. This condition yields (15) m(wi -WE) (8; -iWIY)l/* (8; + iW,Y)l/* .…”

Section: Theoretical Formulationmentioning

confidence: 99%

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Stimulated Brillouin Scattering in a Transversely Magnetised Doped Centrosymmetric Semiconductor

Neogi

Ghosh

1989

Physica Status Solidi (b)

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An analytical investigation is made for the stimulated Brillouin scattering (SBS) in a nearly centrosymmetric, doped semiconductor, which is subjected to a , transverse magnetic field. The origin of this nonlinear interaction lies in the third order optical susceptibility arising due to the nonlinear current density and electrostriction of the medium. The threshold condition is obtained for the onset of the SBS. The effective Brillouin susceptibility and the resulting gain is determined using the coupled mode theory. The effect of magnetic field and doping on the Brillouin susceptibility and Brillouin gain is also studied. Numerical estimations are made for n-type InSb a t 77 K duly irradiated by a pulsed 10.6 pm CO, laser. I n the highly doped regime the transverse magnetic field effects a significant decrease in the threshold and an appreciable enhancement in the gain constant. The analysis established the possibility of occurrence of optical phase conjugation in a doped semiconductor. Stimulierte Brillouin-Streuung (SBS) wird analytisch in einem fast zentrosymmetrischen, dotiertenHalbleiter im transversalen Magnetfeld untersucht. Die nichtlineare Wechselwirkung riihrt von der optischen Suszeptibilitit dritter Ordnung her, die durch die nichtlineare Stromdichte und Elektrostriktion des Mediums entsteht. Die Bedingung fur den Einsatz der SBS wird hergeleitet. Die effektive Brillouin-Suszeptibilitit und die resultierende Verstirkung wird mittels der Theorie der gekoppelten Moden gewonnen. Buch der EinfluB von Magnetfeld und Dotierung wird studiert.Numerische Abschatzungen werden fur n-InSb bei 77 K gemacht, das hinreichend stark durch einen gepulsten 10,6 pm C0,-Laser bestrahlt wird. Bei hoher Dotierung bewirkt das Magnetfeld eine signifikante Abnahme des Schwellenwerts und eine starke Zunahme der Verstarkung. Die Untersuchung zeigt, daD in einem dotierten Halbleiter optische Phasenkonjugation moglich ist.

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