Nonlinear laser-induced regime of surface-electromagnetic-wave generation and submicron periodic relief during liquid-phase photochemical etching of n-III–V semiconductors

Семиногов, В. Н.; Panchenko, V. Ya.; Khudobenko, Alexander I.

doi:10.1134/1.558157

Cited by 2 publications

(1 citation statement)

References 19 publications

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“…The maskless fabrication of LIPSS using cw Ar + laser beam modification of InP in chemical etchant has been reported [35].…”

Section: Introductionmentioning

confidence: 99%

Pulsed-laser-induced photochemical growth of the periodic surface structure on InP

Kumar¹,

Soni²

2009

Semicond. Sci. Technol.

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We report the laser-induced surface modification of InP in a HF electrolyte by second harmonic (532 nm) or fourth harmonic (266 nm) wavelengths of a Nd:YAG laser at a constant energy density of 125 mJ cm −2 and by varying the number of laser pulses. Laser-induced periodic surface structures (LIPSS) parallel to laser polarization are fabricated on InP by photochemical surface modification. Atomic force microscopy (AFM) is used to study the surface morphology of the modified InP surface. Photoluminescence (PL), micro-Raman spectroscopy investigations on LIPSS provide clear evidence of the crystalline nature of the fabricated structures. In addition, PL line-shape analysis is used to estimate size and size distribution of nanoscale features in the LIPSS fabricated by UV laser beams.

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“…The maskless fabrication of LIPSS using cw Ar + laser beam modification of InP in chemical etchant has been reported [35].…”

Section: Introductionmentioning

confidence: 99%

Pulsed-laser-induced photochemical growth of the periodic surface structure on InP

Kumar¹,

Soni²

2009

Semicond. Sci. Technol.

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Laser Direct Writing for Micromachining of Freeform Surface on n-Type GaAs via Photoelectrochemical Etching

Yuan,

Yao,

Han

et al. 2024

J. Electrochem. Soc.

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The fabrication of microstructures featuring freeform surfaces on semiconductor substrates confronts substantial obstacles due to their inherent material difficulties, including considerable hardness and brittleness, as well as geometric complexity. In this investigation, we leverage laser direct writing (LDW) combined with photoelectrochemical etching to achieve precise material removal from semiconductor surfaces. By conducting a series of experiments on a home-made LDW apparatus under varying conditions, we established a correlation between the etching depth and both the power intensity and motion speed of the laser spot. The analysis revealed that the etching depth exhibited linearly with the power intensity of the laser spot and inversely with the motion speed. Additionally, the half widths of the grooves maintained consistently within the range of 1-2 μm. By leveraging this methodology, we successfully fabricated a freeform micro-optical structure on an n-GaAs wafer by precisely adjusting the power intensity of the laser spot during scanning, thus demonstrating the feasibility for achieving nanoscale machining precision. This research underscores the promise of this technique in significantly advancing the fabrication processes of semiconductor devices.

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Nonlinear laser-induced regime of surface-electromagnetic-wave generation and submicron periodic relief during liquid-phase photochemical etching of n-III–V semiconductors

Cited by 2 publications

References 19 publications

Pulsed-laser-induced photochemical growth of the periodic surface structure on InP

Pulsed-laser-induced photochemical growth of the periodic surface structure on InP

Laser Direct Writing for Micromachining of Freeform Surface on n-Type GaAs via Photoelectrochemical Etching

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