Nonlinear modeling of InP devices for W-band applications

Abstract

A recently proposed technique for the distributed modeling of extrinsic parasitic effects in electron devices is used for the very first time in conjunction with a lumped equivalent circuit model for the intrinsic device.\ud \ud Nonlinear modeling of 0.1 μm InP HEMTs for W-band applications is considered here, leading to extremely accurate predictions of harmonic distortion and power added efficiency at the fundamental frequencies of 27 and 94 GHz.\ud \ud The distributed parasitic network is identified through accurate electromagnetic simulations up to the upper frequency limit of the millimeter-wave band (300 GHz), while standard pulsed I/V and S-parameter measurements up to 67 GHz are used for the identification of the intrinsic device model

Introduction – TARGET Special issue

“…The two coordinators of the network, Gottfried Magerl and Sue Ivan, start with a description of how the network worked and which benefits it created for its participants in particular and for the microwave community in general [1]. Davide Resca and his co-authors present a contribution on nonlinear InP device modelling for W-band applications [2]. For the first time, they use a recently proposed technique for the distributed modeling of extrinsic parasitic effects in electron devices in conjunction with a lumped equivalent circuit model for the intrinsic device.…”