Within the framework of the Thomas-Fermi theory, the electronic structure and the nonlinear optical properties in n-type GaAs double delta-doped quantum wells where determined. In particular, was studied the effects of the distance between the doping layers and the hydrostatic pressure on the absorption coefficient and the change in the refractive index. It was found that the interlayer distance has an important effect on potential geometry, while the pressure lowers the bottom of potential. It was found that the influence of the interlayer distance (hydrostatic pressure) generates a red-shift (blue-shift) on the absorption peak and the refractive index change node. The results indicate that the optoelectronic properties in small interlayer distances (25–50 Å) show a high sensitivity to the changes of hydrostatic pressure, whereas for distances larger than 100 Å the effects of hydrostatic pressure are unimportant for the 1-0 transition. On the far-infrared regime, the effects of these parameters can be applied to tuning the position and amplitude of the resonant optical signals.