Nonlinear optics of two‐dimensional transition metal dichalcogenides

Wen, Xinglin; Gong, Zibo; Li, Dehui

doi:10.1002/inf2.12024

Cited by 180 publications

(178 citation statements)

References 186 publications

(550 reference statements)

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“…Compared with HZO or other ferroelectrics, LNO exhibits outstanding ferroelectric and optoelectronic properties, which shows the great potential for integrated optoelectronic devices. [29,30] Therefore, it would be highly expected to integrate a LNO film and 2D TMDs to construct a 2D NC-FET to realize high-speed, ultralow subthreshold switching and quasi-free hysteresis characteristics for energyefficient optoelectronics.…”

Section: Doi: 101002/adma202005353mentioning

confidence: 99%

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

et al. 2020

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Power consumption is one of the most challenging bottlenecks for complementary metal‐oxide–semiconductor integration. Negative‐capacitance field‐effect transistors (NC‐FETs) offer a promising platform to break the thermionic limit defined by the Boltzmann tyranny and architect energy‐efficient devices. However, it is a great challenge to achieving ultralow‐subthreshold‐swing (SS) (10 mV dec−1) and small‐hysteresis NC‐FETs simultaneously at room temperature, which has only been reported using the hafnium zirconium oxide system. Here, based on a ferroelectric LiNbO3 thin film with great spontaneous polarization, an ultralow‐SS NC‐FET with small hysteresis is designed. The LiNbO3 NC‐FET platform exhibits a record‐low SS of 4.97 mV dec−1 with great repeatability due to the superior capacitance matching characteristic as evidenced by the negative differential resistance phenomenon. By modulating the structure and operating parameters (such as channel length (Lch), drain–sourse bias (Vds), and gate bias (Vg)) of devices, an optimized SS from ≈40 to ≈10 mV dec−1 and hysteresis from ≈900 to ≈60 mV are achieved simultaneously. The results provide a new potential method for future highly integrated electronic and optical integrated energy‐efficient devices.

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Section: Doi: 101002/adma202005353mentioning

confidence: 99%

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

et al. 2020

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“…Nowadays, nonlinear optics has become a very useful technology, which is applied to the imaging characterization of materials (including 2D materials), valleytronic applications, frequency conversion to generate new light sources, such as ultraviolet light sources, and it can also be applied to ultrashort pulse generation, optical parameter generation (OPG), THz generation, quantum optics, strong field and attosecond physics, and sensing fields, as shown in Figure 1 [ 14 ].…”

Section: Principle Of Nlo Microscopy Techniquesmentioning

confidence: 99%

“…Although in actual research, we can still observe little SHG in the case of even layers (this is due to the surface effect of the material). In case that the material structure is not destroyed, when the number of layers of the 2D materials is odd, the SHG intensity of some materials (such as WSe 2 and WS 2 [ 39 ], MoS 2 [ 17 ]) decreases with the increase of the number of layers, which is resulted from the thicker sample reabsorbing more SHG photons when the energy of the SHG photon is greater than the band gap [ 14 ], as shown in Figure 4 a,b. The relationship between the SHG intensity and the number of layers is nonlinear, because in general, if the thickness of sample layers is much smaller than the coherence length, the SHG intensity would have a quadratic dependence on the film layers [ 40 ].…”

Section: Characterization Of 2d Materials Propertiesmentioning

confidence: 99%

“…So, FWM is applied to explore the relationship between the layers of a 2D material and the nonlinear signal strength. Figure 5 b shows the linear relationship between a few layers of (N ≤ 6) graphene flake and the FWM signal strength [ 46 , 47 ] (some studies have shown that when the number of graphene layers is N ≤ 13, the relationship between FWM strength and the number of layers is always linear [ 14 ]). As a very useful characterization technique, we believe that FWM has good development prospects.…”

Section: Characterization Of 2d Materials Propertiesmentioning

confidence: 99%

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Nonlinear Optical Characterization of 2D Materials

Zhou

Wang

et al. 2020

Nanomaterials

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Characterizing the physical and chemical properties of two-dimensional (2D) materials is of great significance for performance analysis and functional device applications. As a powerful characterization method, nonlinear optics (NLO) spectroscopy has been widely used in the characterization of 2D materials. Here, we summarize the research progress of NLO in 2D materials characterization. First, we introduce the principles of NLO and common detection methods. Second, we introduce the recent research progress on the NLO characterization of several important properties of 2D materials, including the number of layers, crystal orientation, crystal phase, defects, chemical specificity, strain, chemical dynamics, and ultrafast dynamics of excitons and phonons, aiming to provide a comprehensive review on laser-based characterization for exploring 2D material properties. Finally, the future development trends, challenges of advanced equipment construction, and issues of signal modulation are discussed. In particular, we also discuss the machine learning and stimulated Raman scattering (SRS) technologies which are expected to provide promising opportunities for 2D material characterization.

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“…TPA properties of PdSe2 flakes. The NLO processes in 2D materials can be divided into two classifications, parametric and non-parametric processes [33]. The parametric process in 2D materials is mainly a scattering process, which describes that the ground state is excited into a virtual state, and there is no electron transfer and absorption between the two virtual states, such as the SHG above.…”

Section: Second Harmonic Generation Properties Of Pdse2 Flakesmentioning

confidence: 99%

Giant Nonlinear Optical Activity in Two-Dimensional Palladium Diselenide

Kuang

et al. 2020

Preprint

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Nonlinear optical (NLO) effects in layered atomically thin two-dimensional (2D) materials provide a promising prospect for multifarious optoelectronic applications. The NLO characteristics of transition metal chalcogenides (TMDCs) are attracting growing attention and have been extensively explored recently. However, these materials possess sizable bandgaps ranging from visible to ultraviolet regions, so the investigation of narrow-bandgap materials remains deficient. Here, we report our comprehensive study on the NLO processes in palladium diselenide (PdSe2) flakes that have a near-infrared bandgap. Interestingly, this material exhibits a unique thickness-dependent second harmonic generation (SHG) feature, embodied in the strong (negligible) SHG signals in even (odd) layers, in contrast with that of other TMDCs. Furthermore, the two-photon absorption (TPA) coefficients (β ~4.5×105, 2.83×105, 1.7×105, and 1.85×104 cm/GW) of 1-3 L and bulk PdSe2 are larger by two and three orders of magnitude, compared with that of the conventional 2D materials. Significantly, at the excitation wavelength of 600 nm, a robust saturable absorption with giant modulation depths (αs ~47%, 30%, and 41%) was observed in 1-3 L PdSe2, which has yet been obtained in other 2D materials. Such unique NLO characteristics enable PdSe2 to be a potential candidate for technological innovations in nonlinear optoelectronic devices.

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Nonlinear optics of two‐dimensional transition metal dichalcogenides

Cited by 180 publications

References 186 publications

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Nonlinear Optical Characterization of 2D Materials

Giant Nonlinear Optical Activity in Two-Dimensional Palladium Diselenide

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