1977
DOI: 10.1070/pu1977v020n06abeh005404
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Nonlinear photoelectric emission from metals induced by a laser radiation

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Cited by 64 publications
(30 citation statements)
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“…The bias-voltage dependence (Fig. 21c) also shows that the electrons are generated from a short-lived non-equilibrium carrier distribution function [115][116][117][118][119][120][121] and that different parts of this distribution function are emitted depending on the bias voltage. The generation mechanism changes from one-photon-assisted tunneling at high bias voltages to four-photon-induced emission at zero bias.…”
Section: A Nanometer-sized Femtosecond Electron Source Based On Opticmentioning
confidence: 90%
“…The bias-voltage dependence (Fig. 21c) also shows that the electrons are generated from a short-lived non-equilibrium carrier distribution function [115][116][117][118][119][120][121] and that different parts of this distribution function are emitted depending on the bias voltage. The generation mechanism changes from one-photon-assisted tunneling at high bias voltages to four-photon-induced emission at zero bias.…”
Section: A Nanometer-sized Femtosecond Electron Source Based On Opticmentioning
confidence: 90%
“…They contain enough atoms that their properties can approach those of the bulk metals with a good degree of accuracy. 15,16 The linear 17 and nonlinear 18 photoelectric effects for the bulk metals will then be conceptually closest to the effect considered here of photoemission from nanoparticles.…”
Section: A General Remarksmentioning
confidence: 96%
“…According to Drude dispersion theory the dielectric permeability of photoexcited semiconductor can be determined by the plasma frequency of the electron gas (ωp), incident radiation frequency (ω) and the frequency of electron collisions ( ), according to following expressions: where n is the initial value of the semiconductor permittivity, and ΄ and ΄΄ is the real and imaginary parts of the permeability. Let us consider dynamics of the dielectric permeability in the surface layer of semiconductor taking into account the change in the plasma frequency of non-equilibrium carriers by using a mathematical model (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21). This will help us to identify the role of different emission processes in evolution of the optical properties during a femtosecond pulse.…”
Section: Effect Of Electron Emission On Changes In Optical Propertiesmentioning
confidence: 99%
“…Although the theory of multiphoton absorption is pretty well developed [17], there is a certain difficulty regarding definition of multi-photon absorption cross-sections of real media, when this theory is used for the analysis of multiphoton absorption during femtosecond laser action.…”
Section: Introductionmentioning
confidence: 99%
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