Nonlinear properties of cuprous halides

Chemla, D. S.; Kupecek, Ph.; Schwartz, C.; Schwab, C.; Goltzené, A.

doi:10.1109/jqe.1971.1076611

Cited by 46 publications

(2 citation statements)

References 9 publications

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“…The piezoelectric constant from Boese et al tely. We neglect dispersion and use df; = -12.6 x 10-12m/V froin Chemla et al [13]. The following relations hold:…”

Section: Temperature Dependence and Rnechanisnis 09 The Electro-apticmentioning

confidence: 99%

Electro‐optic properties of CuCl below the absorption edge

Mohler

Thomas

1977

Physica Status Solidi (b)

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The dispersion and temperature dependence of the electro-optic coefficient rzl of CuCk are measured for wavelengths between ,700 nm and t.he absorption edge near 400 nm. A method is described to eliminate the influence of residual strain birefringence which otherwise leads to serious errors. The dispersion of the optical dielectric constant and the electro-optic coefficient is used to determine a schematic spectrum of the imaginary part of the dielectric constant and its changes in an external electric field. A model for the lattice contribution to the electro-optic effect of CuCl based on the concept of bond polarizability is discussed.Die Dispersion und Temperaturebhangigkeit des elektrooptischen Koeffizienten von CuCl werden zwischen 700 nm und der Absorptionskante nahe 400 nm gemessen. Es wird ein Verfahren beschrieben, mit dem der EinfluS restlicher Spannungsdoppelbrechung eliminiert werden kann, die sonst zu storenden MeBfehlern fiihrt. Aus der Dispersion der optischen Dielektrizitiitskonstante und des elektrooptischen Koeffizienten kann ein schematisches Spektrum des Imaginilrteils der Dielektrizitatskonstante und ihrer hderungen im elektrischen Feld bestimmt werden. Es wird ein Modell fur den Gitteranteil des elektrooptischen Effekts von CuCl auf der Grundlage von Bindungspolarisierbarkeiten diskutiert.

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“…The piezoelectric constant from Boese et al tely. We neglect dispersion and use df; = -12.6 x 10-12m/V froin Chemla et al [13]. The following relations hold:…”

Section: Temperature Dependence and Rnechanisnis 09 The Electro-apticmentioning

confidence: 99%

Electro‐optic properties of CuCl below the absorption edge

Mohler

Thomas

1977

Physica Status Solidi (b)

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“…In addition, CuX crystals exhibit second-order nonlinearity because they do not possess inversion symmetry. [10][11][12][13] Considering that SHG was observed in CdSe, which is a noncentrosymmetric crystal, even though the size of the crystal was very small, 14 glass ceramics containing CuX microcrystals possibly show second-order nonlinearity. From both viewpoints, second-order nonlinear properties of CuX-containing glasses are interesting.…”

Section: Introductionmentioning

confidence: 99%

Optical second-order nonlinearity of poled borosilicate glass containing CuCl

Sasai

Tanaka

Hirao

2000

Journal of Applied Physics

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The effect of surface etching on second-harmonic ͑SH͒ intensity and Maker fringe pattern have been examined for poled borosilicate glasses containing CuCl. A drastic decrease in the SH intensity was observed with anode-side surface etching, while such a decrease did not appear when the cathode-side surface etching was carried out. However, after 20 m etching of the anode-side surface, a decrease in SH intensity with the cathode-side etching was observed. For some samples, the theoretical Maker fringe pattern derived on the assumption that the SH wave is generated from a thin layer near the anode-side surface is in good agreement with the experimental one. On the other hand, other samples show oscillation in the fringe, which originates from the interference of SH waves generated from both surfaces. These results suggest that the nonlinear layer is present at both surfaces, although it is much weaker near the cathode. It is thought that the origin of the nonlinearity is attributable to migration of Cu ϩ and Cl Ϫ .

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Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Grundmann

Schein

Lorenz

et al. 2013

Phys. Status Solidi A

252

313

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Halide semiconductors stand at the very beginning of semiconductor science and technology. CuI was reported as the first transparent conductor, and the first field effect transistor was made from KBr. Although halogens are frequently used in semiconductor preparation, little use is currently made from halide semiconductors in electronics and photonics. We review past reports on the metal halide semiconductor CuI and related alloys and discuss recent progress with regard to this material including its use in organic electronics and solar cells as well as our own work on fully transparent bipolar heterostructure diodes (p‐CuI/n‐ZnO) with high rectification of several 107 and ideality factors down to 1.5. γ‐CuI(111) thin film on glass (1 × 1 cm2) and IV‐characteristics of p‐CuI/n‐ZnO/a‐Al2O3 bipolar heterojunction diode.

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Nonlinear properties of cuprous halides

Cited by 46 publications

References 9 publications

Electro‐optic properties of CuCl below the absorption edge

Electro‐optic properties of CuCl below the absorption edge

Optical second-order nonlinearity of poled borosilicate glass containing CuCl

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

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