Nonlinear properties of IMPATT devices

Abstract

153This means economical construction and the ability to fabricate displays with a large number of elements in a wide range of sizes and shapes. For nematic liquid-crystal displays the layer of liquid-crystal material must be uniformly thin. This creates difficulties in fabricating large-area displays.The liquid-crystal display has one important advantage.The switching power required is in the range 10-3 to lW2 W/cm2, making it very compatible with integrated driving circuits [4]. By comparison, the liquid-vapor display requires about 2 W/cm*. While this is much larger than the liquidcrystal requirement it is nevertheless competitive with other types of displays [SI, [9]-[13].Abstract-The basic principles of IMPATT diodes as microwave devices are reviewed and the current status of these devices concerning power output and e5ciency is given. The main purpose of this paper, however, is to discuss the nonlinear properties of these diodes which are useful in the design of amplifiers, oscillators, and other microwave devices. The main results of this paper are obtained from a digital computer analysis where an approximate, but realistic, diode model is employed. A detailed comparison of complementary silicon diodes as well as GaAs diodes concerning power output and efficiency is given. The effects of doping profile, current density, temperature, and material parameters on the performance of these devices have been investigated and are sammarized. Saturation effects which limit the efficiency and power output of these devices are described and optimum efficiencies which can be achieved for various doping profiles are given. A comparison between singlesided and double-drift diodes in both silicon and GaAs is also presented. The Editor.This inviled paper is one of a series planned on fopia of general infer&work was supported by the Air Force Systems Command's Rome Air

Transient analysis of IMPATT oscillator with extended spectral-element time-domain method

“…This information can be got from the equivalent circuit model of the component itself. In this paper, a large-signal circuit model which is shown in Fig.1 is introduced to act as the equivalent circuit of an IMPATT diode [5][6][7][8]. There are two nonlinear elements in this equivalent circuit model.…”

Millimeter Impatt Amplifier Optimization for Telecommunication Systems

“…Theoretical calculations are achieved from a large signal computer program which has been detailed elsewhere [1]. Large signal limitation effects [2][3] and con-straints imposed on the load circuit by amplifier stability requirements [4] are included.…”

Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

“…Several methods for the large-signal analysis of IMPATTs and other negative resistance devices are reported in References [4][5][6][7][8]. Earlier reported large-signal modelling is basically analytical modelling of read-diodes with some simplifications and restrictive assumptions, such as, equal carrier velocities, ionization rates of electrons and holes, punched through depletion layer boundaries, non-inclusion of mobile space charge effects OE9 .…”