In this work, we present the Genome Modeling System (GMS), an analysis information management system capable of executing automated genome analysis pipelines at a massive scale. The GMS framework provides detailed tracking of samples and data coupled with reliable and repeatable analysis pipelines. The GMS also serves as a platform for bioinformatics development, allowing a large team to collaborate on data analysis, or an individual researcher to leverage the work of others effectively within its data management system. Rather than separating ad-hoc analysis from rigorous, reproducible pipelines, the GMS promotes systematic integration between the two. As a demonstration of the GMS, we performed an integrated analysis of whole genome, exome and transcriptome sequencing data from a breast cancer cell line (HCC1395) and matched lymphoblastoid line (HCC1395BL). These data are available for users to test the software, complete tutorials and develop novel GMS pipeline configurations. The GMS is available at https://github.com/genome/gms.

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153This means economical construction and the ability to fabricate displays with a large number of elements in a wide range of sizes and shapes. For nematic liquid-crystal displays the layer of liquid-crystal material must be uniformly thin. This creates difficulties in fabricating large-area displays.The liquid-crystal display has one important advantage.The switching power required is in the range 10-3 to lW2 W/cm2, making it very compatible with integrated driving circuits [4]. By comparison, the liquid-vapor display requires about 2 W/cm*. While this is much larger than the liquidcrystal requirement it is nevertheless competitive with other types of displays [SI, [9]-[13].Abstract-The basic principles of IMPATT diodes as microwave devices are reviewed and the current status of these devices concerning power output and e5ciency is given. The main purpose of this paper, however, is to discuss the nonlinear properties of these diodes which are useful in the design of amplifiers, oscillators, and other microwave devices. The main results of this paper are obtained from a digital computer analysis where an approximate, but realistic, diode model is employed. A detailed comparison of complementary silicon diodes as well as GaAs diodes concerning power output and efficiency is given. The effects of doping profile, current density, temperature, and material parameters on the performance of these devices have been investigated and are sammarized. Saturation effects which limit the efficiency and power output of these devices are described and optimum efficiencies which can be achieved for various doping profiles are given. A comparison between singlesided and double-drift diodes in both silicon and GaAs is also presented. The Editor.This inviled paper is one of a series planned on fopia of general infer&work was supported by the Air Force Systems Command's Rome Air