Nonlinear solutions of PN junctions of piezoelectric semiconductors

Magnetically Induced Carrier Distribution in a Composite Rod of Piezoelectric Semiconductors and Piezomagnetics

“…The above equations are applicable to each component phase of the composite structure in Figure 1 as special cases. They have been used to study thickness vibration of plates [ 25 , 26 ], wave propagation [ 27 , 28 , 29 , 30 , 31 , 32 ], fields near cracks [ 33 , 34 , 35 ], extension of rods [ 36 , 37 , 38 , 39 ], bending of beams [ 40 , 41 , 42 , 43 , 44 , 45 ], and fields near PN junctions [ 46 , 47 , 48 , 49 ] in piezoelectric semiconductors.…”

Coupled compression and bending of piezoelectric semiconductor fibers with imperfection

“…where (11), (17), (18) and (20) have been used. I and A are the moment of inertia and the area of the cross section of the fiber, i.e.,…”

“…Specifically, single piezoelectric semiconductor ZnO fibers and their arrays have been widely used in the piezotronic devices [10][11][12]. There exist extensive studies on the extension [13][14][15][16][17][18][19][20] and bending [21][22][23][24][25][26] of these fibers of course. As well known, compressive loads are common in devices made from fiber arrays between two films [27][28][29][30][31][32][33][34][35] (see Figure 1).…”

Analytical formulas and measurement technique for the built-in potential of practical semiconductor junctions

“…Although the value of the built-in potential of step junctions is easily calculated from the two values of the doping on each side of the junction with a simple, well-known formula, same calculation for highly asymmetrical, implanted or diffused junctions is more complicated. Some researchers approximate its value with the open-circuit voltage of solar cells [1] or use general-physics simulation software (which is very time consuming) to determine it [2], while stating it is one of the "several critical parameters" of such devices [3] and "difficult to detect directly" [4].…”