Nonlinearity reduction in silicon resonators by doping and re-orientation

Shahmohammadi, Mohsen; Fatemi, Hedy; Abdolvand, Reza

doi:10.1109/memsys.2013.6474362

Cited by 22 publications

(7 citation statements)

References 10 publications

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“…The magnitudes of the effects sensitively depends on the mode structure. We describe them for several types of modes, including those studied in the experiment [17,18] and qualitatively compare the results with the observations. The theoretical results refer to both degenerate and nondegenerate electron systems.…”

Section: Introductionmentioning

confidence: 83%

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Strong vibration nonlinearity in semiconductor-based nanomechanical systems

Moskovtsev

Dykman

2017

Phys. Rev. B

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We study the effect of the electron-phonon coupling on vibrational eigenmodes of nano-and micro-mechanical systems made of semiconductors with equivalent energy valleys. We show that the coupling can lead to a strong mode nonlinearity. The mechanism is the lifting of the valley degeneracy by the strain. The redistribution of the electrons between the valleys is controlled by a large ratio of the electron-phonon coupling constant to the electron chemical potential or temperature. We find the quartic in the strain terms in the electron free energy, which determine the amplitude dependence of the mode frequencies. This dependence is calculated for silicon microsystems. It is significantly different for different modes and the crystal orientation, and can vary nonmonotonously with the electron density and temperature.

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Section: Introductionmentioning

confidence: 83%

“…In such systems there was observed an unexpectedly large change of the amplitude dependence of the vibration frequency with the varying electron density [17,18]. When the doping level was increased from 2.8 × 10…”

Section: Introductionmentioning

confidence: 97%

Strong vibration nonlinearity in semiconductor-based nanomechanical systems

Moskovtsev

Dykman

2017

Phys. Rev. B

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“…This test is realized to find the bifurcation point which can be considered as the highest level of power that the device can handle before large nonlinearity is recorded. It is also defined as the input power at which magnitude shows a vertical slope in amplitude and displays the verge of instability [22]. Looking at Figure 14, we mention that the nonlinear changes are confined around this frequency where we may notice a severe frequency shift for f r of 5 MHz with increasing the input power.…”

Section: B Power Handling In Micro-resonatorsmentioning

confidence: 96%

“…The low resistivity of SOI wafers employed for device fabrication may explain these results. It was demonstrated in [22] that for similar micro-resonators fabricated on high doping level of silicon substrate (which result in a low resistivity) are less susceptible to be driven to nonlinearity compared to higher doped wafers. Insertion losses remain stable until 14 dBm and increase after this power level.…”

Section: B Power Handling In Micro-resonatorsmentioning

confidence: 99%

Analysis and optimization of acoustic wave micro-resonators integrating piezoelectric zinc oxide layers

Mortada

Zahr

Orlianges

et al. 2017

Journal of Applied Physics

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International audienceThis paper reports on the design, simulation, fabrication and test results of ZnO-based contour-mode micro-resonators integrating piezoelectric zinc oxide (ZnO) layers. The inter-digitated (IDTs) type micro-resonators are fabricated on ZnO films and suspended top of 2µm thick silicon membranes using silicon-on insulator (SOI) technology. We analyze several possibilities of increasing the quality factor (Q) and the electromechanical coupling coefficient (k t 2) of the devices by varying the numbers and lengths of the IDTs electrodes and using different thicknesses of the ZnO layer. We designed and fabricated IDTs of different finger numbers (n=25, 40, 50 and 80) and lengths (L=100/ 130/ 170/ 200 µm) for three different thicknesses of ZnO films (200, 600 and 800 nm). The measured Q factor confirms that reducing the length and the number of IDTs fingers enables to reach better electrical performances at resonant frequencies around 700 MHz. The extracted results for an optimized micro-resonator device having a IDTs length of 100 μm and 40 finger electrodes, show a Q of 1180 and a k t 2 of 7.4%. We demonstrate also that the reduction of the ZnO thickness from 800 nm to 200 nm increases the quality factor from 430 to 1600 respectively, around 700 MHz. Experimental data are in very good agreement with theoretical simulations of the fabricated device

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“…The top electrode is patterned on the resonant structure to enable two-port operation of the resonator. The specific interdigitated configuration could be used to excite higher harmonic lateral-extensional resonance modes [ 37 , 38 ]. However, in this work the first harmonic resonance is used in the oscillator, and the top electrodes are connected to each other for the resonator to be operated in a one-port configuration.…”

Section: Resonator Design and Characterizationmentioning

confidence: 99%

Acceleration Sensitivity in Bulk-Extensional Mode, Silicon-Based MEMS Oscillators

2018

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Acceleration sensitivity in silicon bulk-extensional mode oscillators is studied in this work, and a correlation between the resonator alignment to different crystalline planes of silicon and the observed acceleration sensitivity is established. It is shown that the oscillator sensitivity to the applied vibration is significantly lower when the silicon-based lateral-extensional mode resonator is aligned to the <110> plane compared to when the same resonator is aligned to <100>. A finite element model is developed that is capable of predicting the resonance frequency variation when a distributed load (i.e., acceleration) is applied to the resonator. Using this model, the orientation-dependent nature of acceleration sensitivity is confirmed, and the effect of material nonlinearity on the acceleration sensitivity is also verified. A thin-film piezoelectric-on-substrate platform is chosen for the implementation of resonators. Approximately, one order of magnitude higher acceleration sensitivity is measured for oscillators built with a resonator aligned to the <100> plane versus those with a resonator aligned to the <110> plane (an average of ~5.66 × 10−8 (1/g) vs. ~3.66 × 10−9 (1/g), respectively, for resonators on a degenerately n-type doped silicon layer).

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Nonlinearity reduction in silicon resonators by doping and re-orientation

Cited by 22 publications

References 10 publications

Strong vibration nonlinearity in semiconductor-based nanomechanical systems

Strong vibration nonlinearity in semiconductor-based nanomechanical systems

Analysis and optimization of acoustic wave micro-resonators integrating piezoelectric zinc oxide layers

Acceleration Sensitivity in Bulk-Extensional Mode, Silicon-Based MEMS Oscillators

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