Nonmagnetic Quantum Emitters in Boron Nitride with Ultranarrow and Sideband-Free Emission Spectra

Li, Xiangzhi; Shepard, Gabriella D.; Cupo, Andrew; Camporeale, Nicolas; Shayan, Kamran; Luo, Yi; Meunier, Vincent; Strauf, Stefan

doi:10.1021/acsnano.7b00638

Cited by 122 publications

(190 citation statements)

References 52 publications

(97 reference statements)

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“…In this section, we review magneto-optical studies on SPEs in h-BN. Traditionally, non-magnetic SPEs involving singlet ground states, possibly intrinsic to a single defect or else from spin-coupled adjacent paired defects, have been associated as possible Group 2 emitters 37,112 . A recent study also reported no change in the optical spectra of h-BN defects with the application of a magnetic field 112 .…”

Section: Magnetic States For Quantum Device Applicationsmentioning

confidence: 99%

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Single-photon emitters in hexagonal boron nitride: a review of progress

2020

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This report summarizes progress made in understanding properties such as zerophonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applications. Critical analyses of the experimental literature and data interpretation, as well as theoretical approaches used to predict properties, are made. In particular, computational and theoretical limitations and challenges are discussed, with a range of suggestions made to overcome these limitations, striving to achieve realistic predictions concerning the nature of emitting centers. A symbiotic relationship is required in which calculations focus on properties that can easily be measured, whilst experiments deliver results in a form facilitating mass-produced calculations.

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Section: Magnetic States For Quantum Device Applicationsmentioning

confidence: 99%

“…Categorisation of visible SPEs in h-BN into two broad groups33,37,85 . Group 2 emitters have also been observed37 with PSB intensities under 2% of the ZPL, suggesting that " < 0.25 and " > 0.8.…”

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confidence: 99%

Single-photon emitters in hexagonal boron nitride: a review of progress

2020

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“…While the width remains quite stable at an average value of 0.28±0.03 nm, the peak center shifts from 630.4 nm to 630.7 nm during the experiment. Spectra measured as a function of time (see Supplementary Material) indicate that this shift is a consequence of spectral and intensity fluctuations (spectral diffusion) probably caused by aleatory changes in the ionization state of nearby charge traps like shallow impurities or defects [15,34,35,36,37]. These fluctuations are also responsible for the relatively broad emission line and for the partial deviation of the line shape from that of a single peak.…”

Section: Fig 1 (A) Schematic Diagram Of the Samples They Contain Tmentioning

confidence: 99%

Acoustically modulated optical emission of hexagonal boron nitride layers

Iikawa

Hernández-Mínguez

Aharonovich

et al. 2019

Applied Physics Letters

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We investigate the effect of surface acoustic waves on the atomic-like optical emission from defect centers in hexagonal boron nitride layers deposited on the surface of a LiNbO3 substrate. The dynamic strain field of the surface acoustic waves modulates the emission lines resulting in intensity variations as large as 50% and oscillations of the emission energy with an amplitude of almost 1 meV. From a systematic study of the dependence of the modulation on the acoustic wave power, we determine a hydrostatic deformation potential for defect centers in this two-dimensional material of about 40 meV/%. Furthermore, we show that the dynamic piezoelectric field of the acoustic wave could contribute to the stabilization of the optical properties of these centers. Our results show that surface acoustic waves are a powerful tool to modulate and control the electronic states of two-dimensional materials.

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“…Most relevant to this work, is the ability of hBN to host atomic impurities (or point defects), that give rise to quantized optical transitions, well below its bandgap. 5,6 hBN colour centres are ultrabright with narrow and tuneable linewidth, [7][8][9] and photostability up to 800 K. 10 Whilst the nature of many of the defects is still uncertain, [11][12][13][14][15] they are being extensively studied as promising candidates for quantum photonic applications requiring on-demand, ultrabright single-photon emission. A step forward, which will significantly extend the functionality of hBN emitters for quantum applications, is to interface their optical properties with spin transitions, and realise spin-polarization and optical spinreadout schemes.…”

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confidence: 99%

Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature

et al. 2020

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Optically addressable spins in wide-bandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spindependent processes in atomically-thin 2D materials has remained elusive. Although optically accessible spin states in hBN are theoretically predicted, they have not yet been observed experimentally. Here, employing rigorous electron paramagnetic resonance techniques and photoluminescence spectroscopy, we identify fluorescence lines in hexagonal boron nitride associated with a particular defect-the negatively charged boron vacancy ( )-and determine the parameters of its spin Hamiltonian. We show that the defect has a triplet (S = 1) ground state with a zero-field splitting of ≈3.5 GHz and establish that the centre exhibits optically detected magnetic resonance (ODMR) at room temperature. We also demonstrate the spin polarization of this centre under optical pumping, which leads to optically induced population inversion of the spin ground state-a prerequisite for coherent spin-manipulation schemes. Our results constitute a leap forward in establishing twodimensional hBN as a prime platform for scalable quantum technologies, with extended potential for spin-based quantum information and sensing applications, as our ODMR studies on hBN -NV diamonds hybrid structures show.

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Nonmagnetic Quantum Emitters in Boron Nitride with Ultranarrow and Sideband-Free Emission Spectra

Cited by 122 publications

References 52 publications

Single-photon emitters in hexagonal boron nitride: a review of progress

Single-photon emitters in hexagonal boron nitride: a review of progress

Acoustically modulated optical emission of hexagonal boron nitride layers

Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature

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