“…Such a UMR sparks a surge of interest in realizing two-terminal rectification, memory, and logic devices 7 , 14 , 15 . To date, more efforts to hunt for the materials with larger γ values by taking the spin–orbit interaction and Fermi energy into account are being made in interface/surface Rashba systems 9 , 15 , 16 . However, given the low Rashba spin splitting energy, e.g., 3 meV (~35 k B ) in LaAlO 3 /SrTiO 3 9 , 5 meV (~58 k B ) in Ge(111) 15 , nonreciprocal transport can only be observed at very low temperature, and here γ -value decreases dramatically with increasing temperature due to the thermal fluctuation.…”