Nonvolatile conductive filaments resistive switching behaviors in Ag/GaO x /Nb:SrTiO3/Ag structure

Abstract

Ag/GaO x /NSTO/Ag structures were fabricated, and the electrical properties measurement results show that the device behaviors a unipolar resistance switching characteristic with bi-stable resistance ratio of three orders. In the positive voltage region, the dominant conducting mechanism of high resistance state obeys Poole-Frenkel emission rules, while in the negative region, that obeys space-charge-limited current mechanism. Both the I-V curves of ON and OFF states and temperature-dependent variation resistances indicate that the unipolar resistance switching behavior can be explained by the formation/rupture of conductive filaments, which composed of oxygen vacancies. The stable switching results demonstrated that the structure can be applied in resistance random access memory devices.

Development of ferroelectric oxides based resistive switching materials

“…Most switching materials show filamentary-type switching behaviour. The rupture and formation of filamentary conducting path between the TE and BE is a regular method to create different types of RS [72][73][74][75]. For example, Au/BaTi 0.95 Co 0.05 O 3 /Pt unit [58] reported by Yan et al exhibited the filamentary RS, as shown in Figure 5.…”