Nonvolatile Memories

NISHI, YOSHIO; IIZUKA, HISAKAZU

doi:10.1016/b978-0-12-002954-9.50007-5

Cited by 10 publications

(5 citation statements)

References 124 publications

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“…These films were later used in nonvolatile memory structures such as MNOS (Metal Nitride Oxide Semiconductor) 6,9 and MAOS (Metal Alminum Oxide Semiconductor). 6,10 Meanwhile, Ta 2 O 5 and Al 2 O 3 were used to replace the SiO 2 capacitor in DRAM (Dynamic Rendom Access Memory). 11,12 Since the huge merits of the miniaturization or scaling 13 of MOSFETs were recognized in early 1970s, the thickness of the SiO 2 gate films has been continuously decreased.…”

Section: History Of High-k Gate Insulator Developmentmentioning

confidence: 99%

“…However, the interfacial and bulk trap densities of these films were very high. These films were later used in nonvolatile memory structures such as MNOS (Metal Nitride Oxide Semiconductor) 6,9 and MAOS (Metal Alminum Oxide Semiconductor). 6,10 Meanwhile, Ta 2 O 5 and Al 2 O 3 were used to replace the SiO 2 capacitor in DRAM (Dynamic Rendom Access Memory).…”

Section: History Of High-k Gate Insulator Developmentmentioning

confidence: 99%

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High Dielectric Constant Materials for Nanoscale Devices and Beyond

Toriumi

Misra

2017

Electrochem. Soc. Interface

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Tremendous progress of CMOS integrated circuits have been conducted by the down-scaling or the miniaturization of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). Ten years, ago, the huge direct-tunneling gate leakage current through the thin gate SiO2 film of 1 nm thickness made it impossible to further scale-down the MOSFETs, and replacing the SiO2 by HfO2-based higher-dielectric constant (high-k) material was the solution. In this paper, the history of high-k gate insulator film development and two topics from recent research results regarding ferroelectricity and reliability are described.

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Section: History Of High-k Gate Insulator Developmentmentioning

confidence: 99%

Section: History Of High-k Gate Insulator Developmentmentioning

confidence: 99%

High Dielectric Constant Materials for Nanoscale Devices and Beyond

Toriumi

Misra

2017

Electrochem. Soc. Interface

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“…However, when they were used as gate insulators, the interfacial and bulk trap densities of these films were very high, and the carrier mobility and reliability of the MOSFETs were very bad. These films were later used in nonvolatile memory structures such as MNOS (4,7) and MAOS (4,8) ECS Transactions, 80 (1) 3-16 (2017)…”

Section: Pastmentioning

confidence: 99%

(Invited) Past, Present, and Future of High-k/Metal Gate Technologies

Iwai

2017

ECS Trans.

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“…For both smooth and textured capacitors, the injected current density J is found to obey a Fowter-Nordheim relation given by (1) J = A Ei~ 2 exp (-B/Et,j) [2] where E, m is the charge injecting field, and A and B are the Fowler-Nordheim parameters. In the case of smooth interface capacitors, E~m is equal to the average applied electric field Ea, whereas in the case of textured interface capacitors it is given by E a multiplied by a factor/~, called field enhancement factor (21).…”

Section: Table I Wafer Parameters Difference In Capacitance and Refle...mentioning

confidence: 99%

“…The Fowler-Nordheim emission process (1) is widely used as a charge injection mechanism in the write/erase operation of programmable nonvolatile memory devices (EEPROM). This process is characterized by its very strong dependence of injection current with programming voltage, and combines the advantages of high injection yield and favorable retention characteristics, as compared to avalanche or direct tunnel injection (2)(3).…”

mentioning

confidence: 99%

Enhanced Current Injection in Thermal Oxides Grown on Texturized Silicon

Olcer

Bühlmann

Ilegems

1986

J. Electrochem. Soc.

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A new technique to achieve enhanced current injection in SiO2 layers thermally grown on texturized monocrystalline Si surfaces is presented. Sites of local field enhancement are created at the normalSi‐SiO2 interface by anisotropic chemical etching of the Si surface prior to oxidation. Current‐voltage characteristics measured on MOS capacitor structures having a 60 nm thick dry thermal oxide grown at 1000°C follow a Fowler‐Nordheim law over more than 5 decades of current and exhibit local field enhancement factors in the range 1–8 (exceptionally up to 13), depending on the etching conditions used. These high field enhancement factors lead to a reduction of the average field necessary to inject a current density of 10−8 A/cm2 to values in the range from 1.5 to 2.3 MV/cm for textured interface oxides as compared to values in excess of 7 MV/cm for smooth interface oxides grown under identical conditions. Characteristics of both texturized and smooth interface capacitors, measured after injecting a total charge of 8.1×10−2C/cm2 , exhibit a slight shift of ∼0.4 MV/cm to higher fields. The behavior of both types of oxides following field stress is similar, indicating that the trapping characteristics of the oxide are not degraded by the surface texturization. The method presented constitutes a promising alternative to other current enhancement techniques, based for example on the use of polysilicon oxides or off‐stoichiometric SiO2 films, which are presently under investigation for EEPROM‐type memory cell applications.

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Nonvolatile Memories

Cited by 10 publications

References 124 publications

High Dielectric Constant Materials for Nanoscale Devices and Beyond

High Dielectric Constant Materials for Nanoscale Devices and Beyond

(Invited) Past, Present, and Future of High-k/Metal Gate Technologies

Enhanced Current Injection in Thermal Oxides Grown on Texturized Silicon

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