Nonvolatile memories with controllable nanogap structures

Furuta, Shigeo; Masuda, Yuichiro; Takahashi, Tsuyoshi; Kumaragurubaran, Somu; Ono, Masashi; Suga, Hiroshi; Naitoh, Yasuhisa; Shimizu, Tetsuo

doi:10.1109/nvmts.2011.6137091

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…From Table , it can be observed that the SET speed of nanogap devices from different research groups is lower than that of RESET during P/E cycling. In the same device, the SET pulse width is often more than ten times the RESET time. ,,, Moreover, the reported shortest RESET time (1–64 ns) is much smaller than the shortest SET time (200 ns) (note that in reference, the SET time of the device is close to the RESET time, which may be due to the low-time resolution of the pulse generator used, rather than the intrinsic characteristics of the device). The SET pulse width has become the main factor limiting the working speed of the nanogap memory.…”

Section: Analysis Of the MD Simulations And Experimental Resultsmentioning

confidence: 97%

Metal Nanogap Memory: Performances and Switching Mechanism

Tian,

Yao,

Ren

et al. 2024

ACS Appl. Mater. Interfaces

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The nanogap memory (NGM) device, emerging as a promising nonvolatile memory candidate, has attracted increasing attention for its simple structure, nano/atomic scale size, elevated operating speed, and robustness to high temperatures. In this study, nanogap memories based on Pd, Au, and Pt were fabricated by combining nanofabrication with electromigration technology. Subsequent evaluations of the electrical characteristics were conducted under ambient air or vacuum conditions at room temperature. The investigation unveiled persistent challenges associated with metal NGM devices, including (1) prolonged SET operation time in comparison to RESET, (2) the potential generation of error bits when enhancing switching speeds, and (3) susceptibility to degradation during program/erase cycles. While these issues have been encountered by predecessors in NGM device development, the underlying causes have remained elusive. Employing molecular dynamics (MD) simulation, we have, for the first time, unveiled the dynamic processes of NGM devices during both SET and RESET operations. The MD simulation highlights that the adjustment of the tunneling gap spacing in nanogap memory primarily occurs through atomic migration or field evaporation. This dynamic process enables the device to transition between the high-resistance state (HRS) and the low-resistance state (LRS). The identified mechanism provides insight into the origins of the aforementioned challenges. Furthermore, the study proposes an effective method to enhance the endurance of NGM devices based on the elucidated mechanism.

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