Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic Materials

Mikolajick, Thomas; Salinga, Martin; Kund, M.; Kever, Thorsten

doi:10.1002/adem.200800294

Cited by 69 publications

(45 citation statements)

References 15 publications

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“…3(a), where denotes the read voltage. As a result, the device may be used as selector device in crossbar arrays of resistive switching memory devices [11], where it is placed in series with each non-volatile memristor, leading to a one memristor-one selector memory cell and ensuring a non-disruptive state read. Allowing higher currents to flow through the device [see the resulting quasi-static characteristic of Fig.…”

Section: The Micro-scale Threshold Switchmentioning

confidence: 99%

“…Recalling the notation introduced at the end of Section II, the small-signal or local state equations of the cell in Fig. 4(c) at the operating point (from (6) is a function of the DC values of memristor voltage and state , i.e., ) may be cast as (10) (11) where the coefficients are defined as the elements of the Jacobian of (8), (9) evaluated at , i.e., . They are analytically expressed as , ,…”

Section: Oscillatory Behavior In a Simple Locally-activementioning

confidence: 99%

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Nonlinear Dynamics of a Locally-Active Memristor

Ascoli

Slesazeck

Mähne

et al. 2015

IEEE Trans. Circuits Syst. I

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160

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This work elucidates some aspects of the nonlinear dynamics of a thermally-activated locally-active memristor based on a micro-structure consisting of a bi-layer of and materials. Through application of techniques from the theory of nonlinear dynamics to an accurate and simple mathematical model for the device, we gained a deep insight into the mechanisms at the origin of the emergence of local activity in the memristor. This theoretical study sets a general constraint on the biasing arrangement for the stabilization of the negative differential resistance effect in locally active memristors and provides a theoretical justification for an unexplained phenomenon observed at HP labs. As proof-of-principle, the constraint was used to enable a memristor to induce sustained oscillations in a one port cell. The capability of the oscillatory cell to amplify infinitesimal fluctuations of energy was theoretically and experimentally proved.

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Section: The Micro-scale Threshold Switchmentioning

confidence: 99%

Section: Oscillatory Behavior In a Simple Locally-activementioning

confidence: 99%

Nonlinear Dynamics of a Locally-Active Memristor

Ascoli

Slesazeck

Mähne

et al. 2015

IEEE Trans. Circuits Syst. I

Self Cite

160

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“…For example, the most straightforward application of resistance switching devices is in crossbar digital memories [8,10,13,16,21]. For such structures, the temperature increase is caused by Joule heating.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic constrains on thermally-assisted memristive switching

Strukov

Williams

2011

Appl. Phys. A

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We derived analytical formulas to estimate the effective thermal resistance of a metallic cylinder subjected to Joule heating, surrounded by an insulator and bounded by two constant temperature planes in order to estimate the temperature of the hottest point of the system. These solutions are especially relevant for modeling unipolar resistive switches (or memristive devices), and they provide insight into the performance tradeoffs for a thermally driven reset transition. In particular, our results indicate that a minimum current of 1 µA is required to successfully reset a unipolar switch, even under the most favorable conditions.

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“…Particularly, the high index of refraction, which is related to a high dielectric permittivity, and the wide band gap, which is related to a low dielectric loss, favor the niobium pentoxide for use as a dielectric material for capacitor technology and for the use as a transparent material in optical systems [4]. The niobium pentoxide has been extensively studied as a gate dielectric for complementary metal oxide semiconductor (CMOS) devices [5] and is in particular a very interesting candidate for nonvolatile memories based on resistive switching [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Thermally activated crystallization of Nb2O5 grown on Pt electrode

et al. 2012

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The influence of the local crystallographic orientation of the polycrystalline bottom platinum electrode on the crystallization of niobium pentoxide thin films during their rapid thermal annealing was investigated by X-ray diffraction, X-ray reflectivity and transmission electron microscopy. The Nb 2 O 5 thin films under study were reactively sputtered in a mixed O 2 /Ar atmosphere and subsequently subjected to the annealing in argon atmosphere at temperatures ranging from 500 • C to 700 • C. The X-ray diffraction confirmed a transition from the amorphous niobium oxide to the crystalline orthorhombic Nb 2 O 5 for temperatures between 500 • C and 600 • C. The X-ray reflectivity measurements showed that the crystallization process was accompanied by a continuous increase of the electron density in Nb 2 O 5 and by a rapid increase of the surface roughness at 700 • C. It was further observed by transmission electron microscopy that Nb 2 O 5 crystallizes selectively and that the

show abstract

Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic Materials

Cited by 69 publications

References 15 publications

Nonlinear Dynamics of a Locally-Active Memristor

Nonlinear Dynamics of a Locally-Active Memristor

Intrinsic constrains on thermally-assisted memristive switching

Thermally activated crystallization of Nb2O5 grown on Pt electrode

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