Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-<i>k</i> gate dielectric stack

Lin, Chih‐Wei; Kuo, Yue; Zhang, Shumao

doi:10.1116/1.4867170

Cited by 17 publications

(18 citation statements)

References 29 publications

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“…The magnitude of the V BD of the N 2 PDA sample is smaller than that of the O 2 PDA sample, i.e., −5.65 V vs. −6.1 V, which may be contributed by the difference in their physical thicknesses. 13,20 Also, the breakdown strength of the ZrHfO stack is related to the defect density in the original film. 19,26 Since the O 2 PDA sample has fewer defects in the ZrHfO bulk and HfSiO x interface layers than the N 2 PDA sample has, the former is more difficult to break down to form conductive paths than the latter is.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, the 28 Si 16 O + component must be from the HfSiO x interface layer formed between the bulk ZrHfO and the Si substrate. 18,20 The above elements are good references for the comparison of the O 2 and N 2 PDA samples. The peak ratio of 28 Si 16 O + in the interface layer to 28 Si + in the Si substrate of the O 2 PDA sample is larger than that of the N 2 PDA sample, i.e., 2.21 vs. 1.59.…”

Section: Resultsmentioning

confidence: 99%

“…A Hfsilicate (HfSiO x ) interface layer was formed between the amorphous bulk ZrHfO layer and the Si substrate, which was confirmed from the electron spectroscopy for chemical analysis (ESCA) and the high resolution transmission electron spectroscopy (HRTEM). 18,20 Then, an 80 nm thick ITO film was deposited on top of the ZrHfO film and wet-etched into 300 μm diameter gate electrodes. An aluminum film was deposited on the back side of the wafer to form the ohmic contact.…”

Section: Methodsmentioning

confidence: 99%

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Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device

Zhang

Kuo

2017

ECS J. Solid State Sci. Technol.

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Electrical and optical properties of solid state incandescent light emitting devices made from MOS capacitors of the same Zr-doped HfO 2 high-k film but two different post deposition annealing atmospheres have been investigated. Compared with the N 2 annealed sample, the O 2 annealed capacitor has a thicker and more SiO x -rich interface layer, lower defect densities, a larger dielectric breakdown strength, and a lower leakage current. Light emitted from the solid-state incandescent light emitting device made from the O 2 annealed capacitor has a high intensity and slightly more blue component than that made from the N 2 annealed capacitor due to the higher temperature of the conductive path. The former contains more Si and O elements in conductive paths than the latter does, which can be used to explain the difference in their electrical and optical characteristics. The post deposition atmosphere affected the original high-k stack's material and physical properties, which influences the formation and material composition of conductive paths and eventually the light emission characteristics. If incandescent and fluorescent light lamps are replaced with solidstate light emitting devices (LEDs), the energy consumption from lighting in the United States can be saved by about 38%.1 LEDs are usually made of direct-bandgap semiconductor materials prepared in the p-n junction or quantum well (QW) structure.2,3 They require the growth of high quality compound semiconductor epitaxy layers on single crystal substrates. The process is expensive and tedious. 1-3The light emission principle is the electron-hole or exciton-exciton recombination. The energy of the emitted light is equivalent to that of the bandgap energy of the semiconductor material.1-3 Therefore, the broad-band light cannot be emitted from a single LED. The white light can be generated using 3 different kinds of LEDs, i.e., red, green, and blue light emitting, or a blue LED in combination with a phosphor layer. 4,5 CdSe/ZnS core-shell nanocrystals have been used to convert the blue/UV light into the green/red light, which is also a method of generating the white light. 6,7 However, the size of the nanocrystal has to be tightly controlled to emit a specific color, which is difficult to achieve. 7 The semiconductor based LED is often subject to the "droop" failure mechanism that shortens the lifetime. 8 It is desirable to have a LED that emits the broad band white light from a single device and can be fabricated with the IC-compatible process with a long lifetime. Recently, Kuo's group reported a new type of solid-state incandescent LED (SSI-LED) that emitted the warm white light similar to that of the incandescent bulb.9-16 The light emitting principle of the SSI-LED is the thermal excitation of the nano-sized conductive path from the passage of a current. [9][10][11][12][13][14][15][16] It is made from a MOS capacitor composed of an amorphous high-k dielectric thin film, such as Zr-doped HfO 2 (ZrHfO), HfO x , or WO x , on a p-type Si wafer.9-16 These high-k...

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device

Zhang

Kuo

2017

ECS J. Solid State Sci. Technol.

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“…Much research has been focused on obtaining a high dielectric constant by stabilizing the tetragonal structure ZrO 2 or HfO 2 by doping, e.g., Si doping of HfO 2 , Er doping of HfO 2 , and Y doping of ZrO 2 , − and Park et al reported remarkable enhancement of dielectric constant (∼47) by Al doping in relatively thick HfO 2 film . Although, there are some previous reports on undoped − or nanocrystal embedded Zr–Hf-mixed oxides − for gate dielectric, the research about combinations of Zr and Hf oxides in ternary metal oxide systems, which include matrices of ZrHf-mixed oxide and stabilizer dopant, for DRAM capacitor have rarely been reported.…”

Section: Introductionmentioning

confidence: 99%

Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr_1–xHf_xO₂ Thin Film without Using Noble Metal Electrode

Ahn

Kwon²

2015

ACS Appl. Mater. Interfaces

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The dielectric properties of the Si-doped Zr1-xHfxO2 thin films were investigated over a broad compositional range with the goal of improving their properties for use as DRAM capacitor materials. The Si-doped Zr1-xHfxO2 thin films were deposited on TiN bottom electrodes by atomic layer deposition using a TEMA-Zr/TEMA-Hf mixture precursor for deposition of Zr1-xHfxO2 film and Tris-EMASiH as a Si precursor. The Si stabilizer increased the tetragonality and the dielectric constant; however, at high fractions of Si, the crystal structure degraded to amorphous and the dielectric constant decreased. Doping with Si exhibited a larger influence on the dielectric constant at higher Hf content. A Si-doped Hf-rich Zr1-xHfxO2 thin film, with tetragonal structure, exhibited a dielectric constant of about 50. This is the highest value among all reported results for Zr and Hf oxide systems, and equivalent oxide thickness (EOT) value of under 0.5 nm could be obtained with a leakage current of under 10(-7) A·cm(-2), which is the lowest EOT value ever reported for a DRAM storage capacitor system without using a noble-metal-based electrode.

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“…Moreover, various efforts are presented with metal nanocrystals such as Ni [17], Ir [18], Pt [19] and Au [20] with HfO2 films which improved the retention characteristics. Currently, Lu [21], Al [22], Zr [23] etc., dopants have been incorporated with HfO 2 but the formation of oxygen-related defect states, better switching and controlling dopant concentration for better NVM devices are still challenging. Therefore, Gadolinium (Gd) doped HfO 2 nanoparticles are fabricated by using a physical vapour deposition process to mitigate this issue and increase oxygen defect-related traps and provide better endurance in the device [24].…”

Section: Introductionmentioning

confidence: 99%

Gd-Doped HfO₂ Memristor Device, Evaluation Robustness by Image Noise Cancellation and Edge Detection Filter for Neuromorphic Computing

et al. 2019

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This paper estimates the robustness of non-volatile device (NVM) Gadolinium (Gd) doped Hafnium oxide (HfO 2 ) nanoparticles (NPs) based memristor which was constructed using as-formed and annealed nanoparticles in 600 • C and 800 • C temperature, based on their performance in various basic image processing applications (i.e. edge detection filter and noise-canceling filter). A catalytic free glancing angle deposition technique (GLAD) is employed to grow Gd doped HfO 2 nanoparticles (NPs) of 8 nm range on the thin film of Silicon oxide SiOx in 30 nm dimension. Annealing process is performed on Gd-doped HfO 2 NPs and and the changes were demonstrated in its surface morphology. The elemental composition of the device was analyzed by Energy Dispersive X-ray (EDX). Photoluminescence (PL) analysis revealed that the topography and electrical characteristics of Gd-doped HfO 2 alter swiftly after annealing process. A leakage current, interface state density (Dit) factor emphasizes that the device annealed at 600 • C portrayed significant improvement in the non-volatile characteristics in comparison with other devices. Additionally, the endurance of the device annealed at 600 • C was seen to possess more than decades of memory potential. The C-V and hysteresis curve measurement demonstrated maximal charge accumulation relative to other devices. Crossbar array is designed from both as-formed and annealed memristor devices.

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Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack

Cited by 17 publications

References 29 publications

Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device

Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device

Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr_1–xHf_xO₂ Thin Film without Using Noble Metal Electrode

Gd-Doped HfO₂ Memristor Device, Evaluation Robustness by Image Noise Cancellation and Edge Detection Filter for Neuromorphic Computing

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Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack

Cited by 17 publications

References 29 publications

Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device

Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device

Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1–xHfxO2 Thin Film without Using Noble Metal Electrode

Gd-Doped HfO2 Memristor Device, Evaluation Robustness by Image Noise Cancellation and Edge Detection Filter for Neuromorphic Computing

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Product

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Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr_1–xHf_xO₂ Thin Film without Using Noble Metal Electrode

Gd-Doped HfO₂ Memristor Device, Evaluation Robustness by Image Noise Cancellation and Edge Detection Filter for Neuromorphic Computing