Nonvolatile Memristive Switching in Self-assembled Nanoparticle Dimers

Abstract

The selective formation of heterogeneous nanoparticle (NP) agglomerates and their memristive switching properties are reported. Following surfactant-mediated selfassembly in suspension, agglomerates of silver nanocubes (AgNCs) and spherical silicon nanoparticles (SiNPs) are prepared in a bottom-up approach. Dimers comprising one AgNC and one SiNP are electrically contacted, and pronounced bipolar memristive switching is demonstrated. The formed nanoscale memristor junctions show in particular narrow distributions of the SET voltage, ON/OFF-resistance ratios in excess of three orders of magnitude, and good retention properties. Ex situ scanning electron microscopy studies directly support a switching model based on Ag-conductive filament formation in the polycrystalline SiNPs. We propose our self-assembled NP memristors as building blocks for the bottom-up construction of future 3D memristive networks.

Cycle-to-cycle switching endurance variability in vertically aligned nanocrystalline molybdenum disulfide: computational insights

“…Each cycle's resistance is measured at HRS and LRS, which are found from current values read at −1.5 V just after 2 s of applied −3.5 V for SET and 4 V for RESET [4]. Similarly, a resistance drift in HRS is observed in the retention test results in another study, where a positive 1.5 V is chosen for the read operation, where a bipolar resistive switching is mostly attributed to Ag + ions in a device comprising Au-Ag nano crystal-Si nanoparticle-Au layers on p-type SiO 2 [31]. To summarize, both systems have RESET (from LRS to HRS) at negative voltages and SET (from HRS to LRS) at positive voltages.…”

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

“…To better understand the nature of these filaments, the temperature coefficient of resistance was measured for devices in the low-resistance ON state. , The thermal expansion coefficient of E-GaIn/GaO x /SiO x /p + -Si devices was determined to be 0.0007 K –1 , which agrees well with the value for metallic gallium (0.0004–0.0007 K –1 ), , strongly suggesting that the filaments are indeed metallic gallium. The I – V sweeps measured for these devices (Figure c, Figure a, and Figure S3) exhibit classical ECM behavior with asymmetric SET/RESET voltages. ,− Given these I – V characteristics and the above C-AFM data, we propose that these devices switch via an ECM mechanism where Ga + cations migrate through the gallium oxide and silicon oxide toward the negative terminal due to the intense local electric field. The Ga + ions are reduced to metallic Ga clusters (filament or “disc” in this case, given the total oxide thickness is less than a few nm), where the disc can grow from either the p + -Si cathode or EGaIn anode, depending on the relative ion mobility and redox rates …”

Amylum Resistive Random Access Memory Based on the Quantization Effect of Gold Nanoparticles

“…In recent years, great progress has been made in the research of nanomaterials as active layers of RRAM, such as zero-dimensional materials (Si, quantum dots, etc. ), one-dimensional materials (such as carbon nanotubes, nanowires, etc.…”

“…Its application fields include data storage, 11,12 neuropsychological calculation, 13,14 logic operations, 15 pattern recognition, 16−18 communication encryption, and brain chips. 19 In recent years, great progress has been made in the research of nanomaterials as active layers of RRAM, such as zerodimensional materials (Si, 20 quantum dots, 21 etc. ), onedimensional materials (such as carbon nanotubes, 22 nanowires, 23 etc.…”