Nonvolatile, Reconfigurable and Narrowband Mid-Infrared Filter Based on Surface Lattice Resonance in Phase-Change Ge2Sb2Te5

Abstract

We propose a nonvolatile, reconfigurable, and narrowband mid-infrared bandpass filter based on surface lattice resonance in phase-change material Ge2Sb2Te5. The proposed filter is composed of a two-dimensional gold nanorod array embedded in a thick Ge2Sb2Te5 film. Results show that when Ge2Sb2Te5 transits from the amorphous state to the crystalline state, the narrowband reflection spectrum of the proposed filter is tuned from 3.197 μm to 4.795 μm, covering the majority of the mid-infrared regime, the peak reflectance decreases from 72.6% to 25.8%, and the corresponding quality factor decreases from 19.6 to 10.3. We show that the spectral tuning range can be adjusted by varying the incidence angle or the lattice period. By properly designing the gold nanorod sizes, we also show that the quality factor can be greatly increased to 70 at the cost of relatively smaller peak reflection efficiencies, and that the peak reflection efficiency can be further increased to 80% at the cost of relatively smaller quality factors. We expect that this work will advance the engineering of Ge2Sb2Te5-based nonvalatile tunable surface lattice resonances and will promote their applications especially in reconfigurable narrowband filters.

Bias Tunable Spectral Response of Nanocrystal Array in a Plasmonic Cavity

“…As a result, only the optical features can be tuned by these approaches. More recently, reconfigurable spectral responses have been obtained from phase change materials , and MEMS actuators, but these strategies are not straightforward to apply to NC-based films.…”

Stimuli-Responsive Phase Change Materials: Optical and Optoelectronic Applications

“… ( a ) Ternary phase diagram for Ge, Sb and Te showing most common chalcogenide phase change materials; ( b ) variation in the visible range of the real ( n ) and imaginary ( k ) part of the refractive index of Ge 2 Sb 2 Te 5 (GST225) upon phase transition [ 14 ]; ( c ) variation in the IR range of the real ( n ) part of the refractive index of GST225 upon phase transition [ 15 ]; ( d ) variation in the IR range of the imaginary ( k ) part of the refractive index of GST225 upon phase transition [ 15 ]. Reproduced from Refs.…”

Periodic Relief Fabrication and Reversible Phase Transitions in Amorphous Ge2Sb2Te5 Thin Films upon Multi-Pulse Femtosecond Irradiation

“…Chalcogenide alloy Ge 2 Sb 2 Te 5 (GST225) is well-known as a basic material for nonvolatile and rewritable memory applications (DVD-RW or Blu-Ray) [1], as well as reconfigurable nanophotonic devices [2]. This medium exhibits a large difference between the optical or electrical properties of the amorphous and crystalline states.…”