Nonvolatile resistive switching memory behavior in WOx/BiFeOy heterojunction based memristor

Wang, Jiangqiu; Sun, Bai; Zhou, Guangdong; Zhu, Shouhui; Yang, Chuan; Ke, Chuan; Zhao, Yong; Wang, Hongyan

doi:10.1016/j.jallcom.2023.168761

Cited by 21 publications

(4 citation statements)

References 43 publications

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“…Wang et al fabricated a three-terminal memristor with the Ag/WO x /BiFeO y /FTO structure by magnetron sputtering. 134 This device showed favourable nonvolatile resistance-switching memory behavior, which meets the requirements for high-density information storage. Liu et al demonstrated a BiFeO 3 ferroelectric thin film of several-nanometer thickness for manipulating in-plane charged domain walls.…”

Section: Research Progressmentioning

confidence: 74%

Memristor-based neural networks: a bridge from device to artificial intelligence

et al. 2023

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Section: Research Progressmentioning

confidence: 74%

Memristor-based neural networks: a bridge from device to artificial intelligence

et al. 2023

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“…Figure a,c and Figure b,d summarize the formation and dissolution of CF and the nature of I – V characteristics of both unipolar and bipolar devices, respectively. , The next-generation memory devices must be superfast, nonvolatile, and high-density to meet the growing demand of consumer and industrial applications. There are different types of memory devices reposted in the literature such as resistive RAM (RRAM), , magnetoresistive RAM (MRAM), , phase-change RAM (PCRAM), etc. For instance, a ferroelectric tunnel junction (FTJ) based nonvolatile memory device exhibits a unique benefit.…”

Section: Resistive Switching (Rs) Effectmentioning

confidence: 99%

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Kamble

Patil

Kamat

et al. 2023

ACS Appl. Electron. Mater.

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In recent years, the emergence of memory devices, especially resistive random-access memories (RRAM), has been a front-runner in many technological applications. This is due to its high-speed operation, structural simplicity, low power consumption, scalability potential, and high-density memory storage features. To develop an efficient and miniaturized memory device based on the resistive switching effect, it is necessary to study the range of materials and their fabrication techniques. In this review article, we have summarized the diverse organic and inorganic materials and their resistive switching performance. Furthermore, we reviewed some potential materials for next-generation resistive switching devices. In the resistive switching device fabrication front, numerous physical, chemical, and biological-based synthesis techniques were briefly reviewed. The influence of preparative parameters was also discussed. Finally, the current status and future directions of this field are discussed. The present review article provides important details of the resistive switching effect, promising organic and inorganic materials, and various fabrication techniques to improve the device's performance for memory applications.

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“…11 In essence, the heterojunction composed of two functional layers can enhance memristive performance due to the role of oxygen vacancies in the formation of a stable resistance state, making them suitable for applications in memory storage and neuromorphic computing. [8][9][10]12,13 In recent years, transition metal oxides have been widely used to enhance the RS properties while their bilayer structure is less explored. Several techniques were explored for the fabrication of bilayer-switching devices such as spin coating, 14 sputtering, 15 and electrochemical.…”

Section: Introductionmentioning

confidence: 99%

Electrical and Electrochemical Investigations on Copper Oxide-Based Monolayer and Bilayer Memristive Devices

Kundale,

Kurade,

Shivade

et al. 2024

ACS Appl. Electron. Mater.

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Resistive switching (RS) devices are the best choice for nonvolatile memory storage and neuromorphic computing applications due to their ease of fabrication, low power consumption, and long stability. In the past, monolayer metaloxide-based RS devices were studied to achieve the desired memory and artificial synaptic characteristics. However, very few studies were conducted on bilayer RS devices to get the desired RS characteristics. Given this, we fabricated bilayer metal oxide devices (ZnO/Cu x O and NiO/Cu x O) with low-cost and reliable electrochemical synthesis techniques. In the present study, we systematically investigated the RS properties of monolayer (Cu x O, ZnO, and NiO) and bilayer (ZnO/Cu x O and NiO/Cu x O) devices. We observed that bilayer-switching devices show good RS properties as compared to monolayer devices. In particular, the ZnO/Cu x O bilayer RS device showed good nonvolatile memory properties while the NiO/Cu x O RS device mimicked various synaptic learning properties. To get clarity on the RS mechanisms, we probed the electrochemical impedance spectroscopy (EIS) technique for both kinds of devices. The EIS study confirms the type-II and type I memristive effects present in the ZnO/Cu x O and NiO/Cu x O devices, respectively. We found that the electrodeposited bilayer-switching layer has potential in RS applications.

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Nonvolatile resistive switching memory behavior in WOx/BiFeOy heterojunction based memristor

Cited by 21 publications

References 43 publications

Memristor-based neural networks: a bridge from device to artificial intelligence

Memristor-based neural networks: a bridge from device to artificial intelligence

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Electrical and Electrochemical Investigations on Copper Oxide-Based Monolayer and Bilayer Memristive Devices

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