Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study

Vitanov, S.; Palankovski, V.

doi:10.1016/j.sse.2008.07.011

Cited by 27 publications

(10 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We have chosen two-dimensional hydrodynamical mathematical model, that often is used in many industrial simulation systems [5,6], which, combining with the original physical models of the behavior of electrons in dielectrics and semiconductors, gave the good results. The same approaches are described in many workings [7][8][9].…”

mentioning

confidence: 99%

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

Гудков

Шашурин

Vyuginov

et al. 2017

Proceedings of the Scientific-Practical Conference "Research and Development - 2016"

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 99%

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

Гудков

Шашурин

Vyuginov

et al. 2017

Proceedings of the Scientific-Practical Conference "Research and Development - 2016"

View full text Add to dashboard Cite

show abstract

“…Furthermore, with an increase in filling factor, the resonance absorption coefficient and modulation depth also increased. Our work may be helpful for the design and optimization of AlGaN/GaN based THz modulators and detectors 25 …”

Section: Discussionmentioning

confidence: 99%

“…The low-field electron mobility μ0 versus logarithm of doping density can be modeled by using the Caughey–Thomas formula in the form 9 , 25 μ0=μmax−μmin1+(n/nref)α+μmin.…”

Section: Structure Design and Methodologymentioning

confidence: 99%

Investigation of temperature-dependent polarization properties in grating-gate AlGaN/GaN heterostructures by Drude conductivity at THz frequency

et al. 2023

View full text Add to dashboard Cite

We describe the temperature-dependence polarization properties of grating-gated AlGaN/GaN heterostructures at terahertz frequencies. Using the finite-difference time-domain method, it was demonstrated that as the temperature increases, the resonant frequency of the incident light was red-shifted. Simultaneously, a shorter gate length leads to a higher resonant frequency. In addition, at a lower temperature, the coupling efficiency of terahertz radiation and plasmon is higher. In our simulation results, the maximum modulation depth is 88%; at a gate length of 800 nm and lattice temperature of 77 K. For the same gate length, with higher electron gas concentrations and filling factor, greater modulation depths were produced. Studies on these properties may help in the design and optimization of terahertz detectors and modulators.

show abstract

“…An accurate calculation of the band structure and distinct scattering mechanisms is extremely difficult and time-consuming. To circumvent this difficulty, the number of approximations was reported [23][24][25]. The electron mobility dependence on impurity concentration and lattice temperature may be expressed using formula proposed by Caughey and Thomas [22]:…”

Section: Model Descriptionmentioning

confidence: 99%

A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics

Ryndin

Al-Saman

Коноплев

2019

Active and Passive Electronic Components

View full text Add to dashboard Cite

A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of transistor, we calculated the nonuniform spatial distributions of the electrical field, electron temperature, and electron mobility within the channel. The model is in a good agreement with experimental data over the linear and saturation regions of operation. The model provides precise simulating of HEMT transistors and can be utilized as a tool for analysis and prediction of influence of the material parameters on device and circuit characteristics.

show abstract

Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study

Cited by 27 publications

References 15 publications

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

Investigation of temperature-dependent polarization properties in grating-gate AlGaN/GaN heterostructures by Drude conductivity at THz frequency

A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics

Contact Info

Product

Resources

About