A new scalable small-signal model for 0.1 μm AlGaN/ GaN HEMT up to 110 GHz is presented in this paper. The taps between the gate/drain manifold and fingers on the device has been investigated and included in the equivalent circuit. In addition, to ensure high scalability, a set of scaling rules are presented. A novel extraction procedure for extrinsic capacitances using full-wave electromagnetic (FW-EM) method has been introduced along with corresponding structures used for EM simulation. The nonlinear dependence of the extrinsic inductances on the gate-width has been accounted for by a new scaling rule, which can be used to extract their value from measurement data. To guarantee the stability of the scaling coefficients, two devices with different gate-width have been utilized for their generation. The proposed scalable model has been verified using 0.1 μm AlGaN/GaN HEMT devices with different gate-widths and different gate-fingers. The experiment results show good agreement between model and measurement S-parameters up to 110 GHz.

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High-frequency dispersion of the AlGaN/GaN HEMT output resistance has been investigated. Using the electron momentum balance equation, we demonstrated that the deviation of the dynamic drift velocity from its static value could be considered as the main reason for the high-frequency dispersion of the transistor output resistance. Moreover, a new intrinsic small-signal equivalent circuit has been proposed to consider the output resistance dispersion. Comparison with measured s-parameters have validated the proposed approach.

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