An estimation of 2DEG density for GaN HEMT using analytical equation considering the charge conservation low

Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function

“…6 The formation of the two-dimensional electron gas (2-DEG) density in a high-electron mobility transistor (HEMT) has been widely studied in the last few decades. [14][15][16][17][18] The energy Fermi level versus 2-DEG sheet concentration (i.e., E F vs. n s ) is given by a transcendental equation which is not appropriate for compact modeling. Thus, many approximations and semiempirical expressions have been proposed to avoid the transcendental equation.…”