Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al₂O₃/Si₃N₄ bilayer as gate dielectrics

Abstract

By a self-terminating gate recess etching technique, a normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor (MISFET) was fabricated using Al2O3/Si3N4 bilayer as gate dielectrics. Owing to the high breakdown electric field (∼10 MV/cm) of the gate dielectrics, the device exhibits a large gate swing of 18 V, a high threshold voltage of 1.7 V (at ID = 100 µA/mm), a large maximum drain current of 534 mA/mm, a gate leakage current lower than 20 nA/mm in the whole gate swing, and a high OFF-state breakdown voltage of 1282 V. Furthermore, owing to the high gate overdrive (VGS − VTH), the on-resistance of the device only increases by 5.4% under a constant stress of VGS/VDS = 18 V/1 V.

The effect of SiN x film for H plasma implantation in p-GaN/AlGaN/GaN high electron mobility transistors

“…[5][6][7][8] In recent years, p-GaN gate HEMTs have received extensive attention and have been widely used in commerce. [9][10][11][12] The p-GaN gate HEMT is a normally-off device that uses the p-GaN under the gate to form a p-n junction with the 2-DEG in the channel, thus forming a depletion region under the gate and blocking the 2-DEG in the channel. Typical fabrication technology of p-GaN gate HEMTs was to grow a thin p-GaN cap layer on the AlGaN barrier layer and then selectively etch the p-GaN cap layer.…”

Improved performance of enhancement-mode GaN MIS-FET based on a self-terminating gate recess etching technique with in situ NH3 pre-treatment

“…11,12) In our previous works, the self-terminating wet etching technique combined with various dielectrics was studied for the fabrication of normally-off GaN MIS-FETs on a sapphire substrate. [13][14][15][16] However, recently, GaN-on-Si power devices have attracted more attention due to their advantages of batch fabrication, low cost, and compatibility with Si-based processes. However, compared with Ref.…”

“…To avoid the gate length and device structure impacts on other electrical parameters (R on , I D et al), a fair comparison was made with other E-mode GaN-based devices, 5,[14][15][16][17][19][20][21][22][23][24][25][26][27][28] as shown in Fig. 5(b).…”

Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatment

“…allium nitride (GaN)-based high electron mobility transistors (HEMTs) on a silicon (Si) substrate are becoming promising candidates for future power conversion systems thanks to their outstanding properties (e.g., high operating frequency, high energy conversion efficiency, large operating temperature range, and low cost). [1][2][3][4][5][6] Nowadays, commercial enhancement-mode (Emode) discrete GaN power HEMTs with a p-GaN gate structure are available from many suppliers. 7) However, it is difficult for GaN-based power converters with a gate driver using Si integrated circuits (ICs) to take full advantage of GaN materials owing to the large parasitic inductance in device packaging, cross-talk, and some performance features of GaN HEMTs (e.g., low threshold voltage, and small gate swing).…”