Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

Yao, Yao; He, Zhiyuan; Yang, Fan; Shen, Zhen; Zhang, Jincheng; Ni, Yiqiang; Li, Jin; Wang, Shuo; Zhou, Guocheng; Zhong, Jiaming; Wu, Zhisheng; Zhang, Baijun; Ao, Jin‐Ping; Liu, Yang

doi:10.7567/apex.7.016502

Cited by 32 publications

(25 citation statements)

References 25 publications

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“…Table 6 shows the most promising results obtained in recessed gate hybrid MISHEMTs. ALD-deposited Al 2 O 3 is one of the most diffused solutions for normally-off recessed gate hybrid MISHEMTs [141][142][143][144][145][146][147]. However, an excessive threshold voltage instability has been observed for Al 2 O 3 gate insulators [121,148].…”

Section: Binary High-κ Oxides For Gan-based Mishemtsmentioning

confidence: 99%

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

et al. 2022

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High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These materials have already found application in microelectronics, mainly as gate insulators or passivating layers for silicon (Si) technology. However, since the last decade, the post-Si era began with the pervasive introduction of wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), which opened new perspectives for high-κ materials in these emerging technologies. In this context, aluminium and hafnium oxides (i.e., Al2O3, HfO2) and some rare earth oxides (e.g., CeO2, Gd2O3, Sc2O3) are promising high-κ binary oxides that can find application as gate dielectric layers in the next generation of high-power and high-frequency transistors based on SiC and GaN. This review paper gives a general overview of high-permittivity binary oxides thin films for post-Si electronic devices. In particular, focus is placed on high-κ binary oxides grown by atomic layer deposition on WBG semiconductors (silicon carbide and gallium nitride), as either amorphous or crystalline films. The impacts of deposition modes and pre- or postdeposition treatments are both discussed. Moreover, the dielectric behaviour of these films is also presented, and some examples of high-κ binary oxides applied to SiC and GaN transistors are reported. The potential advantages and the current limitations of these technologies are highlighted.

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Section: Binary High-κ Oxides For Gan-based Mishemtsmentioning

confidence: 99%

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

et al. 2022

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“…In particular, the values of the peak mobility μ FE(max) of these devices vary in the range 38–251 cm 2 ·V −1 ·s −1 , while the threshold voltage V th is usually in the range +1 to +2 V. For devices with a typical gate length of 1.5 μm, the values of the on-resistance R ON in the operation conditions (i.e., at sufficiently high V GS ) are in the range 7.2–26 Ω.mm [57,62,63,64], as can be also seen in the calculation shown in Figure 5b.…”

Section: Normally-off Gan Hemt Technologymentioning

confidence: 99%

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

et al. 2019

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Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., AlxGa1−xN) are promising semiconductors for the next generation of high-power and high-frequency devices. However, there are still several technological concerns hindering the complete exploitation of these materials. As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications. This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology. A special focus will be put on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT), discussing the role of the metal on the p-GaN gate and of the insulator in the recessed MISHEMT region. Finally, the advantages and disadvantages in the processing and performances of the most common technological solutions for normally-off GaN transistors will be summarized.

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“…Junction field‐effect transistors (JFETs) or gate injection transistors (GITs) with p‐type (Al)GaN layer can deplete the 2DEG at the gate region . Selective area regrowth technique of AlGaN barrier layer realizes reduced access resistance and depleted 2DEG at gate region simultaneously …”

Section: Introductionmentioning

confidence: 99%

Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface

Uesugi

Shindome

Kajiwara

et al. 2017

Physica Status Solidi (a)

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In this work, a thermal treatment technique under NH3 ambient for the recess surface of GaN‐MOSFETs is developed. Immediately following the fabrication process of the recess, the bottoms of these structures have rough surfaces and step‐terrace structures cannot be observed because of the plasma‐induced damage. However, clear step‐terrace structures are formed by the thermal treatment, and the RMS values of the surface roughness decrease from 0.26 to 0.14 nm, which is comparable to those of the as‐grown epitaxial film. In addition, it is confirmed that concentrations of impurity atoms introduced during the recess fabrication process are decreased by the thermal treatment. The channel mobility of the GaN‐MOSFETs without the thermal treatment is 118 cm2 Vs−1, whereas that of the device whose fabrication process includes the thermal treatment increased to 149 cm2 Vs−1. These results indicate that the thermal treatment under NH3 ambient is effective for reducing on‐state resistance of GaN‐MOSFETs.

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Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

Cited by 32 publications

References 25 publications

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Improvement of Channel Mobility of GaN‐MOSFETs With Thermal Treatment for Recess Surface

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