Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive

Hughes, B.; Chu, Rongming; Lazar, James; Hulsey, S.D.; Garrido, Austin; Zehnder, Daniel; Musni, Marcel; Boutros, K. S.

doi:10.1109/wipda.2013.6695566

Cited by 22 publications

(12 citation statements)

References 7 publications

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“…The combination of excellent intrinsic properties such as high breakdown field strength, high electron carrier velocity, and high sheet carrier density has made GaN‐based high‐electron‐mobility transistors (HEMTs) primary candidates for realizing ultra‐low‐loss power switching devices . However, conventional AlGaN/GaN HEMTs with Schottky‐gates are normally‐on devices requiring a negative gate voltage to turn them off.…”

Section: Introductionmentioning

confidence: 99%

Interface trap states in Al₂O₃/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Yatabe

Asubar

Sato

et al. 2014

Physica Status Solidi (a)

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We have investigated the effects of the inductively coupled plasma (ICP) etching of AlGaN surface on the resulting interface properties of the Al 2 O 3 /AlGaN/GaN structures. The experimentally measured capacitancevoltage (C-V) characteristics were compared with those calculated taking into account the interface states density at the Al 2 O 3 /AlGaN interface. As a complementary method, photoassisted C-V method utilizing photons with energies less than the bandgap of GaN was also used to probe the interface state density located near AlGaN midgap. It was found that the ICP etching of the AlGaN surface significantly increased the interface state density at the Al 2 O 3 /AlGaN interface. It is likely that ICP etching induced the interface roughness, disorder of chemical bonds and formation of various type of defect complexes including nitrogen-vacancy-related defects at the AlGaN surface, leading to poor C-V curve due to higher interface state density at the Al 2 O 3 /AlGaN interface.

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Section: Introductionmentioning

confidence: 99%

Interface trap states in Al₂O₃/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Yatabe

Asubar

Sato

et al. 2014

Physica Status Solidi (a)

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“…The output current of DAB can be derived as (4) in which N ps is transformer turns ratio from primary to secondary sides, V dc is the DC link voltage, φ is the phase shift angle, f s is the switching frequency, V b is the battery voltage , L lk is the commutation inductance. Meanwhile, the battery charger output current be in form of…”

Section: Switching Energy Characterizationmentioning

confidence: 99%

“…Chargers in automobiles today switch Si devices at 10 kHz, while in this work, the switching frequency is increased to 500 kHz to significantly reduce the size of the magnetic components in the charger. In a previous work, high voltage normally-off GaN devices from HRL laboratories [1][2][3][4] are used to build high power density, efficient bidirectional battery charger [5,6]. The topology of this charger is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…2. With this layout, the power loop of each device is distributed evenly, and the loop inductance is significantly reduced to 3.6 nH because of the vertical loop [4]. In real implementation, usually 6 to 8 devices are paralleled.…”

Section: A Gan Multi-chip Module Introductionmentioning

confidence: 99%

“…To minimize the gate loop inductance, two Si MOSFETS bare dice are integrated onto the module as a totem-pole driver and put as close to the gate trace as possible, therefore 1 nH gate inductance is achieved [4]. The built GaN MCM photo with six devices in parallel is shown in Fig.…”

Section: A Gan Multi-chip Module Introductionmentioning

confidence: 99%

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The optimal design of GaN-based Dual Active Bridge for bi-directional Plug-IN Hybrid Electric Vehicle (PHEV) charger

Xue

Boroyevich

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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a high frequency, high efficiency bi-directional battery charger for Plug-in Hybrid Electric Vehicle (PHEV) is built with high voltage normally-off GaN-on-Si HFETs. This paper characterized the multi-chip-model both statically and dynamically. The optimal design of the isolated 500 kHz Dual Active Bridge DC/DC stage is detailed, taking account the wide battery voltage range and sinusoidal charging, to eliminate large DC link capacitor. Experimentally result shows a 500 kHz DAB converter with discrete inductor and transformer can achieved 97.2% efficiency at 1kW and 96.4% efficiency at 2.4 kW. By integrating the inductor into the transformer, 98.2% efficiency is achieved at 1 kW.

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Fundamentals

Seidel¹,

Wicht²

2021

Highly Integrated Gate Drivers for Si and GaN Power Transistors

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Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive

Cited by 22 publications

References 7 publications

Interface trap states in Al₂O₃/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Interface trap states in Al₂O₃/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

The optimal design of GaN-based Dual Active Bridge for bi-directional Plug-IN Hybrid Electric Vehicle (PHEV) charger

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Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive

Cited by 22 publications

References 7 publications

Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

The optimal design of GaN-based Dual Active Bridge for bi-directional Plug-IN Hybrid Electric Vehicle (PHEV) charger

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Interface trap states in Al₂O₃/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Interface trap states in Al₂O₃/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces