Note: An ion source for alkali metal implantation beneath graphene and hexagonal boron nitride monolayers on transition metals

Lima, Luis Henrique de; Cun, Huanyao; Hemmi, Adrian; Kälin, T.; Greber, Thomas

doi:10.1063/1.4848936

Cited by 5 publications

(6 citation statements)

References 17 publications

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“…In previous work we reported the formation of Ar and Rb nanotents by the exposure of the h -BN nanomesh to low energy ions. , The immobilization of atoms occurs at two distinct sites beneath the “wire crossings” of the h -BN nanomesh superhoneycomb. It was found that the implantation length ( i .…”

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confidence: 98%

“…20,27 In previous work we reported the formation of Ar and Rb nanotents by the exposure of the h-BN nanomesh to low energy ions. 24,28 The immobilization of atoms occurs at two distinct sites beneath the "wire crossings" of the h-BN nanomesh super-honeycomb. It was found that the implantation length (i.e., the distance that Ar atoms move after penetration beneath the h-BN monolayer before they localize in nanotents) is about 8 nm and the occupation ratio between the two distinct sites is influenced by the ion dose and the annealing temperature.…”

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confidence: 99%

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Two-Nanometer Voids in Single-Layer Hexagonal Boron Nitride: Formation via the “Can-Opener” Effect and Annihilation by Self-Healing

et al. 2014

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The exposure of hexagonal boron nitride single layers to low energy ions leads to the formation of vacancy defects that are mobile at elevated temperatures. For the case of h-BN on rhodium, a superhoneycomb surface with 3 nm lattice constant (nanomesh), a concerted self-assembly of these defects is observed, where the "can-opener" effect leads to the cut-out of 2 nm "lids" and stable voids in the h-BN layer. These clean-cut voids repel each other, which enables the formation of arrays with a nearest neighbor distance down to about 8 nm. The density of voids depends on the Ar ion dose, and can reach 10(12) cm(-2). If the structures are annealed above 1000 K, the voids disappear and pristine h-BN nanomesh with larger holes is recovered. The results are obtained by scanning tunneling microscopy and density functional theory calculations.

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confidence: 98%

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Two-Nanometer Voids in Single-Layer Hexagonal Boron Nitride: Formation via the “Can-Opener” Effect and Annihilation by Self-Healing

et al. 2014

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“…Recently, intercalation processes of Ar and Rb, forming the so-called 'nanotent' structures, have been reported after exposure of the h-BN nanomesh to low energy ions. [38,39] The ion bombardment sputters out boron and nitrogen atoms, leaving vacancy defects within the h-BN layer, which are visible at the rim and at the wire of the nanomesh by STM. Interestingly, an annealing of the defective system leads to self-healing processes, where the defects seem to gather, first forming larger defects and then inducing reconstruction of the monolayer (formation of holes and self-healing).…”

Section: Formation Of B and N Vacanciesmentioning

confidence: 99%

Chemical Reactions on Metal-supported Hexagonal Boron Nitride Investigated with Density Functional Theory

Bacle

Seitsonen

Iannuzzi

et al. 2014

Chimia

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Nanotechnology, in order to become ultimately efficient, requires achieving the construction of elemental structures at the atomistic precision. One way toward this goal is using templated surfaces as support for directed synthesis. The nanomesh, a single-atom thick layer of hexagonal boron nitride on Rh(111) [Corso et al., Science 2004, 303, 217], has appeared as one candidate that provides a periodically corrugated structure on the nanometre scale. We present density functional theory studies where we investigate various properties of the nanomesh, ranging from intrinsic defects to covalent functionalisation with hydroxyl radicals. Further we study selective dehalogenation of an organic molecule (I6-CHP) on the nanomesh. This molecule adsorbs at particular sites of the template and has been activated for C-C coupling in recent experiments via dissociation of its halogen ligands. In all cases we find explicit templating effects, either in full agreement with experimental studies or predicting novel phenomena. The studies are evidence for the predictive power of modern electronic structure simulations and the insight that can be gained when used together with experiments on complex chemical structures.

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“…In previous work, we reported the formation of Ar and Rb nanotents by 50 exposing low energy ions to the h-BN/Rh(111) nanomesh [1,40]. The immobilization of atoms occurs at two distinct sites beneath the "wire crossings" of the h-BN nanomesh honeycomb [41].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…The supercell is divided into three different regions with different registries of 40 the carbon atoms to the Ru atoms in the first substrate layer [24]. Two of these regions, where one of the two carbon atoms of the 1 × 1 honeycomb unit cell of graphene bind to a Ru atom are called "valley" and the third region is named as "hill", where the carbon does not bind to the substrate, but is stabilized by the strong sp 2 σ-bonds.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Ar implantation beneath graphene on Ru(0001): Nanotents and “can-opener” effect

et al. 2015

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Exposing a monolayer of graphene on ruthenium (g/Ru(0001)) to low energy Ar + ions leads to nanotent formation and "can-opener" effect, similar phenomena as observed for h-BN/Rh(111) targets [1]. Nanotents are extra protrusions in the sp 2 monolayers beneath which atoms are immobilized at room temperature. Annealing the Ar + implanted structures results in the "can-opener" effect,i.e., the formation of the voids with a diameter about 2 nm within the graphene layer. The voids preferentially settle in the "hill" regions of the g/Ru (0001) superstructure and thus display spacial selectivity. This provides a convenient method to control defect positions within graphene membranes with nanometer precision. The results are obtained by scanning tunneling microscopy, low energy electron diffraction and photoemission, and are backed with density functional theory calculations.

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Note: An ion source for alkali metal implantation beneath graphene and hexagonal boron nitride monolayers on transition metals

Cited by 5 publications

References 17 publications

Two-Nanometer Voids in Single-Layer Hexagonal Boron Nitride: Formation via the “Can-Opener” Effect and Annihilation by Self-Healing

Two-Nanometer Voids in Single-Layer Hexagonal Boron Nitride: Formation via the “Can-Opener” Effect and Annihilation by Self-Healing

Chemical Reactions on Metal-supported Hexagonal Boron Nitride Investigated with Density Functional Theory

Ar implantation beneath graphene on Ru(0001): Nanotents and “can-opener” effect

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