Nouvelle voie d'élaboration de GaN: la synthèse solvothermale

Collado, C.; Demazeau, G.; Berdeu, B.; Largeteau, Alain; Garcia, J. Ocana; Guyaux, Jean-Louis; Massies, J.

doi:10.1016/s1387-1609(00)86432-4

Cited by 4 publications

(4 citation statements)

References 9 publications

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“…One interesting and potentially important method is ammonothermal growth. Several workers have demonstrated that microcrystalline gallium and aluminum nitride can be prepared in supercritical ammonia. , However, obtaining high-quality bulk crystals even only as large as a few millimeters still meets a lot of challenges. Thus, a systematic review of ammonothermal syntheses of nitride crystals and their intermediates during the past decades is appropriate; our own efforts on the growth of high-quality single crystals of the III-nitrides in supercritical ammonia will be also reported.…”

Section: Introductionmentioning

confidence: 99%

Ammonothermal Synthesis of III-Nitride Crystals

Wang

Callahan

2006

Crystal Growth & Design

124

103

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Ammonothermal synthesis of nitrides is reviewed, with an emphasis on gallium and aluminum nitrides due to their important applications as direct wide band gap semiconductors. Since the crystallization process of nitrides involves the formation of some intermediate compounds during ammonothermal synthesis where a mineralizer is used, some ternary amides and ammoniates of aluminum and gallium with alkali metals or halides are also reviewed briefly. The ammonothermal crystallization of GaN and AlN bulk crystals, which is analogous to the hydrothermal growth of oxides, is introduced. Retrograde solubility, mineralizers, pressure-temperature-volume-concentration (PTVC) relations, phase relations, and transport growth of GaN in alkaline solutions are discussed in detail. Recent progress of GaN single-crystal growth by the ammonothermal technique is reported. We have grown GaN bulk single crystals up to 10 mm 2 by 1-mm thick. Issues such as ammonia breakdown, impurity incorporation, and scale-up of the ammonothermal growth of III-nitrides and perspectives on the method are also discussed.

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Section: Introductionmentioning

confidence: 99%

Ammonothermal Synthesis of III-Nitride Crystals

Wang

Callahan

2006

Crystal Growth & Design

124

103

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“…Other groups have pursued GaN growth by ammonothermal methods [7][8][9][10][11][12][13][14]. By analogy to a-quartz, which is grown commercially on the scale of thousands of tons per year, this method would be expected to be scalable.…”

Section: Introductionmentioning

confidence: 99%

Bulk GaN crystal growth by the high-pressure ammonothermal method

D'Evelyn

Hong

Park

et al. 2007

Journal of Crystal Growth

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“…Ammonothermal processes with alkaline mineralizers (alkali amides) seem to transport only the hexagonal phase, and 0.5-mm sized crystals of h-GaN have been grown from this medium . Ammonothermal growth with acidic mineralizers is apparently a very complicated process as the product mix (c-GaN vs h-GaN), product yield, crystal sizes, and crystal morphology are extremely sensitive to reaaction conditions, , and can also be sensitive to reaction scale…”

Section: Introductionmentioning

confidence: 99%

Ammonothermal Recrystallization of Gallium Nitride with Acidic Mineralizers

Purdy

Jouet

George

2002

Crystal Growth & Design

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Crystals of cubic GaN (c-GaN) were grown ammonothermally using hexagonal gallium nitride as a nutrient. h-GaN was sealed in a quartz tube with anhydrous ammonia, an acid (NH 4 X; X ) Cl, Br, I), and in some cases a lithium halide (LiX). The bottom of the tube was heated to 470-510 °C in a vertically oriented pressure vessel containing a hydrostatic pressure of 30000-40000 psi. The thermal gradient was approximately -10 °C/cm. h-GaN dissolved in the hot zone and GaN crystals deposited in the cooler zone near the top of the tube. Most (>80%) of the deposit was c-GaN for most of the experimental conditions studied, but the hexagonal form was a persistent contaminant. When LiX was used as a co-mineralizer triangular prisms of c-GaN often grew. Triangular prismatic needles of c-GaN grew in a (11 h1) direction in experiments containing a low concentration (0.28 mol %) of NH 4 Cl, a larger concentration (2.0 mol %) of LiCl, and a 55% fill factor. The crystals were tapered, becoming wider as they grew, and crystals of up to 0.1 mm in width were obtained.

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Nouvelle voie d'élaboration de GaN: la synthèse solvothermale

Cited by 4 publications

References 9 publications

Ammonothermal Synthesis of III-Nitride Crystals

Ammonothermal Synthesis of III-Nitride Crystals

Bulk GaN crystal growth by the high-pressure ammonothermal method

Ammonothermal Recrystallization of Gallium Nitride with Acidic Mineralizers

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