Novel application of MgF2as a back reflector in a-SiOx:H thin-film solar cells

Kang, Dong‐Won; Sichanugrist, Porponth; Konagai, Makoto

doi:10.7567/apex.7.082302

Cited by 9 publications

(5 citation statements)

References 27 publications

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“…Also, in order to obtain high open‐circuit voltage, wide‐bandgap a‐SiO:H that we have developed so far is used for 1st, 2nd, 4th and 5th cells . Low temperature deposited a‐Si:H is used for the 3rd cell.…”

Section: Structure and Fabrication Methods Of Amorphous Si:h Based Quimentioning

confidence: 99%

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Konagai

Sasaki

2019

Progress in Photovoltaics

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Hydrogenated amorphous Si(a-Si:H) quintuple-junction solar cells, which consist of a-SiO x :H/a-SiO x :H/a-Si:H/a-SiO x :H/a-SiO x :H, were fabricated by plasma CVD method. The total thickness was 0.6-0.8 μm. Irradiation intensity (Pin) dependence of the open circuit voltage (V oc ) of quintuple-junction solar cells was measured. The decreasing amount ΔV oc (1/10) of the open-circuit voltage when the irradiation intensity became 1/10 was 62mV/cell. Voc drops rapidly from around the irradiation intensity of 1mW/cm 2 (approximately 1,000 lux). This large Voc reduction is due to leakage current. Then, we discussed the origin of the leakage current, and, finally, by improving the leakage current, a very high open-circuit voltage V oc of 3.5 V was demonstrated under LED light illumination. Furthermore, we theoretically analyzed Voc as a function of the irradiation intensity, including effects of the leakage current and the film quality of i-a-Si(O):H. It was found from the simulation results that it is necessary to increase the shunt resistance Rsh and to lower the defect density of i-a-Si(O):H in order to obtain a sufficient Voc-Pin characteristics for IoT devices application under low illuminance. KEYWORDS amorphous silicon, quintuple-junction, solar cell, low illuminance 1 | INTRODUCTION Over the past decades, solar cell development for power applications has been vigorously promoted all over the world. As a result, the production of solar cells in the world in 2017 has reached over 100 GW. 1 Also, the application fields of solar cells are widely spread from smallscale residential use for kW level to large-scale Mega-solar over 100 MW. Recently, in view of new application, developments of photovoltaic system on the ocean, on roads, in mobilities, and in flying vehicles are expected. On the other hand, the Internet of Things (IoT) has caused a new technological paradigm shift around the world, and attention has been focused on solar cell development as a self-sustaining power source for application to IoT devices. 2-8 The IoT promises a vast network of interconnected devices and sensors to monitor the world. As more objects are embedded with wireless sensors and communication systems the challenge of powering devices not connected to an electrical-network has emerged. Energy harvesting has become a key enabler of IoT. Self-powered sensor systems use a variety of energysavings, such as solar energy using solar cells, mechanical energy and so on. As provided in ref. 2, solar cells are the easiest-to-use energy sources. The achieved reduction of the electric power demand for small electronic devices to the range of microwatts has led to the concept of "micro-energy harvesting".Looking at solar cells that have been put into practical use as power sources for consumer equipment, most are crystalline Si solar

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Section: Structure and Fabrication Methods Of Amorphous Si:h Based Quimentioning

confidence: 99%

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Konagai

Sasaki

2019

Progress in Photovoltaics

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“…In the case of intrinsic a-SiO x :H films, the deposition rate was $ 2.3 nm/min with a bandgap of 1.85 eV (from Tauc's plot). Other deposition environments were described in detail in previous studies [18]. A magnetron sputtering system was used to prepare AZO thin films for the back reflection.…”

Section: Methodsmentioning

confidence: 99%

Light management of a-SiOx:H thin film solar cells with hydrogen-reduced p+ buffer at TiO2/p-layer interface

Kang

Chowdhury

Sichanugrist

et al. 2015

Solar Energy Materials and Solar Cells

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“…Recent studies have shown that the optical losses of the back reflector can also be reduced by introducing magnesium fluoride (MgF 2 ) or lithium fluoride (LiF) as a buffer layer in thin film [42,43] and crystalline silicon heterojunction solar cells [44]. Both materials exhibit a low refractive index (n o1.5) and a very low extinction coefficient.…”

Section: Enhancing the Short Circuit Current And Minimizing Optical Lmentioning

confidence: 98%

On the potential of light trapping in multiscale textured thin film solar cells

Tamang

Hongsingthong

Sichanugrist

et al. 2016

Solar Energy Materials and Solar Cells

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Novel application of MgF₂as a back reflector in a-SiO_x:H thin-film solar cells

Cited by 9 publications

References 27 publications

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Light management of a-SiOx:H thin film solar cells with hydrogen-reduced p+ buffer at TiO2/p-layer interface

On the potential of light trapping in multiscale textured thin film solar cells

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