Novel-approach for fabrication of CdS thin films for photoelectrochemical solar cell application

Khot, Kishorkumar V.; Mali, Sawanta S.; Kharade, Rohini R.; Mane, Rahul M.; Patil, P. S.; Hong, Chang Kook; Kim, Jihun; Heo, Jaeyeong; Bhosale, Popatrao N.

doi:10.1007/s10854-014-2350-z

Cited by 17 publications

(26 citation statements)

References 46 publications

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“…Over the past few years, interesting optical and luminescent properties of CdS NPs have undergone intense investigations mainly due to their wide range of applications in optoelectronic http devices [1,2], biosensors [3] and photoelectrochemical solar cell [4][5][6] etc. In this context, many reports correlates the surface structure dependent PL emission of colloidal CdS NPs with their surface modification using different kinds of biocompatible organic materials such as poly(methyl methacrylate), Alkylamines, block co-polymers etc.…”

Section: Introductionmentioning

confidence: 99%

Varying photoluminescence emission of CdS nanoparticles in aqueous medium: A comparative study on effect of surfactant structure

Kumar¹,

Mehta

2015

Nano-Structures & Nano-Objects

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Section: Introductionmentioning

confidence: 99%

Varying photoluminescence emission of CdS nanoparticles in aqueous medium: A comparative study on effect of surfactant structure

Kumar¹,

Mehta

2015

Nano-Structures & Nano-Objects

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“…). Upon illumination, magnitude of short circuit current density increase by way of negative polarity region, confirms Cd(SSe) thin film is n ‐type semiconductor . Photoconversion efficiency obtained was 0.57%.…”

Section: Resultsmentioning

confidence: 74%

“…Such a nanosphere comes towards each other and forms well grown nubbly‐like surface morphology. Such morphology is beneficial for the improvement in conversion efficiency due to large surface for effectual light absorption …”

Section: Resultsmentioning

confidence: 99%

“…Upon illumination, magnitude of short circuit current density increase by way of negative polarity region, confirms Cd(SSe) thin film is n-type semiconductor. [8] Photoconversion efficiency obtained was 0.57%. Such photoconversion efficiency is might be due to the good crystalline nature with large surface area.…”

mentioning

confidence: 88%

“…Such morphology is beneficial for the improvement in conversion efficiency due to large surface for effectual light absorption. [3,8,9] EDS analysis is carried out to determine actual atomic percentage of respective elements in deposited thin film. From EDS pattern, it confirms that presence of Cd, S and Se element in deposited thin film (Figure 4).…”

mentioning

confidence: 99%

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Novel Approach for Invention of Nubbly‐Like Cd(SSe) Thin Film: Photoelectrochemical Application

Khot

Mali

Patil

et al. 2016

Macromolecular Symposia

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Summary: Self-organized arrested precipitation technique (APT) has been successfully used for synthesis of nubbly-like cadmium sulfoselenide (Cd(SSe)) thin film. Deposited Cd(SSe) thin films was characterized by using UV-Vis spectrophotometer, X-ray diffraction (XRD) study, field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) techniques. Surface profiler study revealed that thickness of deposited thin film is 793 nm. Optical absorption study indicated that, direct allowed type of transition with 1.86 eV optical band gap energy. XRD study confirmed that, deposited thin film is nanocrystalline in nature with pure hexagonal crystal structure and calculated crystallite size is 68 nm. Well-adherent and crack free deposition on substrate surface was observed in low resolution FESEM image. High resolution FESEM image shows formation of nubblylike surface morphology from bunch of smaller nanospheres. EDS pattern confirms that deposited thin film is stoichiomtric in nature. Highest short circuit current density (J sc ) of 0.454 mA/cm 2 and corresponding value of open circuit voltage (V oc ) was 782 mV. From J-V measurement, photoconversion efficiency of 0.57% was achieved.

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Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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The development of cost-effective and nontoxic thin film materials is vital for fabrication of solar cells. We are presenting a combinatorial synthesis approach (CSA) for the deposition of chalcogenide Sn-Bi-S graded thin films by thermal evaporation. Post-deposition thermal annealing in the temperature range of 200-500°C in an argon atmosphere has been carried out for the Sn-Bi-S thin films. The effect of annealing treatment and initial composition on the structural properties of the Sn-Bi-S graded thin films was studied by using energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD), and Raman spectroscopy. XRD measurements showed that the thin films were grown in polycrystalline structure. Different microstructural parameters such as crystallite size, dislocation density, and microstrain were estimated after postdeposition thermal treatment and found annealing temperature dependent. From the transmission spectra the estimated optical band gap energy values were found in the range 1.27-1.43 eV for the (Sn/Bi) molar ratio of 2.18-0.67 in a typical sample annealed at 400°C. Photoconductivity response was determined for incident light of wavelength 300-1100 nm and was observed to be annealing temperature and Sn/Bi molar ratio dependent. Photoconductivity was also noted to depend upon the Sn/Bi molar ratio with Sn-rich samples giving the strongest response. Sn-rich compositions also showed p-type conductivity over the temperature range of 350-400°C. These findings show that the CSA has potential for the screening of high-quality Sn-Bi-S thin films.

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Novel-approach for fabrication of CdS thin films for photoelectrochemical solar cell application

Cited by 17 publications

References 46 publications

Varying photoluminescence emission of CdS nanoparticles in aqueous medium: A comparative study on effect of surfactant structure

Varying photoluminescence emission of CdS nanoparticles in aqueous medium: A comparative study on effect of surfactant structure

Novel Approach for Invention of Nubbly‐Like Cd(SSe) Thin Film: Photoelectrochemical Application

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

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