Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Antoniou, Marina; Lophitis, Neophytos; Bauer, F.; Nistor, I.; Bellini, Marco; Rahimo, Munaf; Amaratunga, G.A.J.; Udrea, F.

doi:10.1109/led.2015.2433894

Cited by 32 publications

(18 citation statements)

References 14 publications

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“…Since the proposed design has the p-rings under the trenches, no issues with hot carrier injection are expected. Indeed, Fig.7 shows the electric field distribution across a cutline running through the active area gate trench with and without the presence of the under-the-gate p-ring [3,4]. Furthermore, when compared to the Deep Dielectric termination, which is the most compact, no deep trenches are needed, and no need for new and unproven materials are needed.…”

Section: Device Simulations and Performancementioning

confidence: 99%

“…Further, the SuperJunction or RESURF [1,2] effect has been proved to improve the tradeoff between breakdown and onstate. The concept of p-ring trench IGBT [3,4] was introduced recently and proved extremely effective in reducing the on-state losses without affecting the switching and breakdown characteristics of the device. In the particular study [4], it was demonstrated that a very high density of floating p-regions in the active portion of the device can squeeze the carrier path in the top portion of n-drift region, potentially increasing on-state resistance; this adverse effect was shown to be over-compensated by higher doping of "n-enh" active region.…”

Section: Introductionmentioning

confidence: 99%

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Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area

Antoniou

Lophitis

Udrea

et al. 2019

IEEE Electron Device Lett.

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A new type of high voltage termination, namely the "deep p-ring trench" termination design for high voltage, high power devices is presented and extensively simulated. Termination of such devices consumes a large proportion of the chip size; the proposed design concept not only reduces the termination silicon area required, it also removes the need for an additional mask as is the case of the traditional p+ ring type termination. Furthermore, the presence of the pring under and around the bottom of the trench structure reduces the electric field peaks at the corners of the oxide which results in reduced hot carrier injection and improved device reliability.

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Section: Device Simulations and Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area

Antoniou

Lophitis

Udrea

et al. 2019

IEEE Electron Device Lett.

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“…In order to improve the trade-off relationship between the Von and the BV, additional charges are introduced to balance the DNI [4][5][6][7]. Nevertheless, the DNI will be fully depleted at high reverse voltage, which means that the DNI still has limited value.…”

Section: Introductionmentioning

confidence: 99%

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

Chen

Lin

et al. 2020

IEEE J. Electron Devices Soc.

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A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped Player to completely shield the N-injector and to protect the N-injector from high electric field more steadily. Then, the N-injector can be heavily doped to reduce the on-state voltage (Von), and Von can be designed independently of the breakdown voltage (BV). TCAD simulation indicates that under the same level of BV, compared with the conventional Carrier Store Trench Bipolar Transistor (CSTBT), the Eoff (the turn-off loss) of the proposed SIGBT is 85.6% lower under Von ≈ 1.4 V. Moreover, the saturation current density also decreases by 31.2%. Index Terms-carrier store trench bipolar transistor (CSTBT), on-state voltage, shielded insulated gate bipolar transistor (SIGBT), saturation current.

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“…The IGBT is indispensable for many power electronic equipment, for example, traction, motor control, and induction heating [1,2,3]. In most cases, the IGBT needs to connect with an anti-parallel free-wheeling diode (FWD) for reverse conduction.…”

Section: Introductionmentioning

confidence: 99%

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

Xie

Wei

et al. 2017

IEICE Electron. Express

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We propose two novel ways to alleviate the reverse conducting insulated gate bipolar transistor (RC-IGBT) snapback phenomenon by introducing the floating field stop layer with a lightly doped p-floating layer and recess structure at the backside. The floating field stop layer is submerged in the N-drift region and located several micrometers above the P + anode region, which would not degrade the blocking capability but can suppress the snapback phenomenon effectively. When the collector length exceeds 100 µm, the snapback voltage ΔV SB of the floating field stop RC-IGBT with the p-floating layer can be less than 0.5 V. Furthermore, the recess structure at the backside can separate the N + short and P + anode region, which will be beneficial to eliminate the snapback. Finally, an RC-IGBT with a floating buffer layer and recess at the backside is proposed. Compared to the RC-IGBT featuring an oxide trench between the N + short and P + anode, the proposed one has utilized the simple recess structure to replace the costly oxide trench and achieved the identical characteristics simultaneously.

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Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Cited by 32 publications

References 14 publications

Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area

Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area

A Novel Shielded IGBT (SIGBT) With Integrated Diodes

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

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