Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area

Abstract

A new type of high voltage termination, namely the "deep p-ring trench" termination design for high voltage, high power devices is presented and extensively simulated. Termination of such devices consumes a large proportion of the chip size; the proposed design concept not only reduces the termination silicon area required, it also removes the need for an additional mask as is the case of the traditional p+ ring type termination. Furthermore, the presence of the pring under and around the bottom of the trench structure reduces the electric field peaks at the corners of the oxide which results in reduced hot carrier injection and improved device reliability.

Termination area design for reduced leakage current and improved ruggedness of HV IGBTs

“…Insulated gate bipolar transistors (IGBTs) are widely used for high-voltage applications, owing to their remarkable efficiency and excellent cost versus performance effectiveness enabled by continuous technological advancements. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] One key feature of IGBTs is hole injection from the Collector which creates a high-level of plasma in the drift region, leading to a very low on-state resistance. Termination area is an essential part of the IGBT chip, needed to efficiently spread the potential at the edge of the die and prevent premature breakdown.…”