Novel approach using tapers for high power FET chips characterization

Zoyo, M.; Galy, C.; Darbandi, A.; Lapierre, L.; Sautereau, J.F.

doi:10.1109/issse.1995.498028

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…The high power amplifier has been designed and manufactured by Alcatel using the microwave hybrid technology and the power chip device [4]. Figure 2 shows the simplified schematic of this amplifier.…”

Section: Sspa Designmentioning

confidence: 99%

Ku -Band Solid State Power Amplifier For Siral Altimeter

Darbandi¹,

Lavielle²,

Naudy³

et al. 2002

32nd European Microwave Conference, 2002

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A compact, high efficiency 25W Kuband SSPA has been developed for the Siral Altimeter, cryosat program. SSPAs have been used in radar application for many years. The main advantages of the pulsed SSPAs are the followings: -Low distortion of amplitude and phase during the pulse.-High reproducibility of identical pulses. -High quality of output spectrum: low harmonic contents and reduced group delay time.This SSPA combines the output of four 8W-hybrid PHEMT modules with an integral waveguide combiner. AM/PM conversion was measured at 0.5 degree / dB and the phase shift were measured less than 5 degree.

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Section: Sspa Designmentioning

confidence: 99%

Ku -Band Solid State Power Amplifier For Siral Altimeter

Darbandi¹,

Lavielle²,

Naudy³

et al. 2002

32nd European Microwave Conference, 2002

Self Cite

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“…These measurements allow extracting the electrical parameters of linear and non-linear models. General rules of scaling are used in order to obtain the electrical model parameters of power PHEMT devices used in the power amplifier [5] [6]. The amplifier employs four times 18000µm PHEMTs (0.5µm PHEMT from Triquint Semiconductor Texas).…”

Section: ιι Amplifier Designmentioning

confidence: 99%

25W C-Band Highly Efficient on Board Hybrid Amplifier

Darbandi¹,

Zoyo²,

Touchais³

et al. 2002

32nd European Microwave Conference, 2002

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-A very high efficient, low distortion Cband power amplifier using a linear and non-linear models of the PHEMT devices has been developed. Single stage amplifier fabricated with 4x18mm gate width PHEMT devices exhibits a power output of 44 dBm at 2dB of gain compression, a linear gain of 11.5dB and an associated PAE from 50% to 52% in the frequency range of 3.6-3.9GHz.These excellent results are performed by developing an accurate non-linear model of the PHEMT device, the 2.5D electromagnetic simulation of the passive structures and optimizing the output matching network of the amplifier by using a high dielectric substrate with low insertion loss.

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